Band alignment in WSe2-graphene heterostructures

ACS Nano

Volumn 9, Issue 4, 2015, Pages 4527-4532

  Kim, Kyounghwan ^a   Larentis, Stefano ^a   Fallahazad, Babak ^a   Lee, Kayoung ^a   Xue, Jiamin ^a   Dillen, David C ^a   Corbet, Chris M ^a   Tutuc, Emanuel ^a  

^a The University of Texas at Austin   (United States)

Author keywords

band gap; band offset; graphene; heterostructure; tungsten diselenide

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHENE TRANSISTORS; HETEROJUNCTIONS; SELENIUM COMPOUNDS; VALENCE BANDS;

AMBIPOLAR BEHAVIOR; BAND OFFSETS; CARRIER POPULATION; CHARGE NEUTRALITY; ELECTRON TRANSPORT; GRAPHENE FIELD-EFFECT TRANSISTORS; TUNGSTEN DISELENIDE; VALENCE BAND EDGES;

TUNGSTEN COMPOUNDS;

EID: 84929120167     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01114     Document Type: Article

References (33)

1. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453
2. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
3. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275
4. Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides ACS Nano 2014, 8, 1102-1120
5. 2 Nat. Nanotechnol. 2013, 8, 497-501
6. Geim, A. K.; Grigorieva, I. V. Van der Waals Heterostructures Nature 2013, 499, 419-425
7. Liu, X. Z.; Galfsky, T.; Sun, Z.; Xia, F. N.; Lin, E. C.; Lee, Y. H.; Kena-Cohen, S.; Menon, V. M. Strong Light-Matter Coupling in Two-Dimensional Atomic Crystals Nat. Photonics 2015, 9, 30-34
8. Schutte, W. J.; Deboer, J. L.; Jellinek, F. Crystal-Structures of Tungsten Disulfide and Diselenide J. Solid State Chem. 1987, 70, 207-209
9. 2) J. Appl. Phys. 1968, 39, 4736
10. Yousefi, G. H. Optical-Properties of Mixed Transition-Metal Dichalcogenide Crystals Mater. Lett. 1989, 9, 38-40
11. Jiang, H. Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach J. Phys. Chem. C 2012, 116, 7664-7671
12. Zeng, H. L.; Liu, G. B.; Dai, J. F.; Yan, Y. J.; Zhu, B. R.; He, R. C.; Xie, L.; Xu, S. J.; Chen, X. H.; Yao, W. Optical Signature of Symmetry Variations and Spin-Valley Coupling in Atomically Thin Tungsten Dichalcogenides Sci. Rep. 2013, 3, 1608
13. Wickramaratne, D.; Zahid, F.; Lake, R. K. Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides J. Chem. Phys. 2014, 140
14. 2 Nano Lett.. 2013, 13, 5627-5634
15. 2 Opt. Express 2013, 21, 4908-4916
16. Podzorov, V.; Gershenson, M. E.; Kloc, C.; Zeis, R.; Bucher, E. High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides Appl. Phys. Lett. 2004, 84, 3301-3303
17. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
18. 2 Field Effect Transistors Nano Lett. 2013, 13, 1983-1990
19. 2 Photo-Electrochemical Solar-Cell J. Phys. D: Appl. Phys. 1988, 21, 1028-1030
20. Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-Energy Conversion and Light Emission in an Atomic Monolayer p-n Diode Nat. Nanotechnol. 2014, 9, 257-261
21. 2 p-n Junctions Nat. Nanotechnol. 2014, 9, 268-272
22. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y. F.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in a Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 9, 262-267
23. Zhang, Y. J.; Oka, T.; Suzuki, R.; Ye, J. T.; Iwasa, Y. Electrically Switchable Chiral Light-Emitting Transistor Science 2014, 344, 725-728
24. 2 Heterostructures Nano Lett. 2014, 14, 2039-2045
25. Yankowitz, M.; Larentis, S.; Kim, K.; Xue, J.; McKenzie, D.; Huang, S.; Paggen, M.; Ali, M. N.; Cava, R. J.; Tutuc, E.; LeRoy, B. J. Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures Nano Lett. 2015, 15, 1925-1929
26. Kim, S.; Jo, I.; Dillen, D. C.; Ferrer, D. A.; Fallahazad, B.; Yao, Z.; Banerjee, S. K.; Tutuc, E. Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure Phys. Rev. Lett. 2012, 108
27. Yan, R. S.; Zhang, Q.; Li, W.; Calizo, I.; Shen, T.; Richter, C. A.; Hight-Walker, A. R.; Liang, X. L.; Seabaugh, A.; Jena, D. Determination of Graphene Work Function and Graphene-Insulator-Semiconductor Band Alignment by Internal Photoemission Spectroscopy Appl. Phys. Lett. 2012, 101
28. Yu, Y. J.; Zhao, Y.; Ryu, S.; Brus, L. E.; Kim, K. S.; Kim, P. Tuning the Graphene Work Function by Electric Field Effect Nano Lett. 2009, 9, 3430-3434
29. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947-950
30. 2 Heterostructures for Flexible and Transparent Electronics Nat. Nanotechnol. 2013, 8, 100-103
31. Fallahazad, B.; Lee, K.; Kang, S.; Xue, J. M.; Larentis, S.; Corbet, C.; Kim, K.; Movva, H. C. P.; Taniguchi, T.; Watanabe, K. Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures Nano Lett. 2015, 15, 428-433
32. Kang, S.; Fallahazad, B.; Lee, K.; Movva, H.; Kim, K.; Corbet, C.; Taniguchi, T.; Watanabe, K.; Colombo, L.; Register, L. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FETs IEEE Electron Device Lett. 2015, 10.1109/LED.2015.2398737
33. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726