Pentacene thin-film transistors and inverters with dual-gate structure

Electrochemical and Solid-State Letters

Volumn 9, Issue 11, 2006, Pages

  Koo, Jae Bon ^a   Lim, Jung Wook ^a   Kim, Seong Hyun ^a   Ku, Chan Hoe ^a,b   Lim, Sang Chul ^a   Lee, Jung Hun ^a,b   Yun, Sun Jin ^a   Yang, Yong Suk ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC INVERTERS; THRESHOLD VOLTAGE;

DUAL GATE DRIVER TRANSISTOR; GATE DIELECTRICS; VOLTAGE BIAS; VOLTAGE TRANSFER;

THIN FILM TRANSISTORS;

EID: 33748691796     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2335942     Document Type: Article

References (25)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.), 14, 99 (2002).
2. G. Horowitz, Adv. Mater. (Weinheim, Ger.), 10, 365 (1998).
3. S. Iba, T. Sekitani, Y. Kato, T. Someya, H. Kawaguchi, M. Takamiya, T. Sakurai, and S. Takagi, Appl. Phys. Lett., 87, 23509 (2005).
4. G. H. Gelinck, E. van Veenendaal, and R. Coehoorn, Appl. Phys. Lett., 87, 73508 (2005).
5. M. Morana, G. Brest, and C. Brabec, Appl. Phys. Lett., 87, 153511 (2005).
6. E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. van Veenendaal, B.-H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk, Nat. Mater, 2, 678 (2003).
7. E. Cantatore and E. J. Meijer, in Proceedings of the 29th European Solid-State Circuits Conference ESSCIRC 2003, p. 29 (2003).
8. A. Dodabalapur, J. Baumbach, K. Baldwin, and H. E. Katz, Appl. Phys. Lett., 68, 2246 (1996).
9. W. Lim and S. J. Yun, Electrochem. Solid-State Lett., 7, F45 (2004).
10. I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett., 86, 103502 (2005).
11. J. B. Koo, J. W. Lim, S. H. Kim, S. J. Yun, C. H. Ku, S. C. Lim, and J. H. Lee, Thin Solid Films, Submitted.
12. J. Lee, J. H. Kim, and S. Im, J. Appl. Phys., 95, 3733 (2004).
13. S. Yaginuma, J. Yamaguchi, K. Itaka, and H. Koinuma, Thin Solid Films, 486, 218 (2005).
14. P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys., 96, 7312 (2004).
15. D. Li, E. Borkent, R. Noitrup, H. Moon, H. Katz, and Z. Bao, Appl. Phys. Lett., 86, 42105 (2005).
16. M. Ling, Z. Bao, and D. Li, Appl. Phys. Lett., 88, 33502 (2006).
17. T. Sekitani, S. Iba, Y. Kato, Y. Noguchi, T. Someya, and T. Sakurai, Appl. Phys. Lett., 87, 73505 (2005).
18. L.-L. Chua, J. Zaumsell, J.-F. Chang, C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London), 434, 194 (2005).
19. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed., p. 387, Wiley, New York (1998).
20. S. Dimittijev, Understanding Semiconductor Devices, 2nd ed., p. 221, Oxford University Press, New York (2000).
21. T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase, IEEE Trans. Electron Devices, 50, 830 (2003).
22. A. Salleo and R. A. Street, J. Appl. Phys., 94, 471 (2003).
23. R. A. Street, A. Salleo, and M. L. Chabinyc, Phys. Rev. B, 68, 85316 (2003).
24. H. Klauk, D. J. Gundlach, and T. N. Jackson, IEEE Electron Device Lett., 20, 289 (1999).
25. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm, Appl. Phys. Lett., 82, 4175 (2003).