Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation

Nanotechnology

Volumn 26, Issue 43, 2015, Pages

  Wan, Bensong ^a,b   Yang, Bingchao ^c   Wang, Yue ^d   Zhang, Junying ^a   Zeng, Zhongming ^b   Liu, Zhongyuan ^c   Wang, Wenhong ^d  

^a BEIHANG UNIVERSITY   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^c YANSHAN UNIVERSITY   (China)

^d INSTITUTE OF PHYSICS   (China)

Author keywords

black phosphorus; field effect transistor; stability

Indexed keywords

CONVERGENCE OF NUMERICAL METHODS; DISPLAY DEVICES; ENERGY GAP; PASSIVATION; PHOSPHORUS; STABILITY;

AMBIENT CONDITIONS; ENHANCED STABILITY; ENVIRONMENTAL STABILITY; FIELD EFFECT TRANSISTOR (FETS); FLEXIBLE DEVICE; HIGH MOBILITY; ON/OFF CURRENT RATIO;

FIELD EFFECT TRANSISTORS;

EID: 84944342817     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/43/435702     Document Type: Article

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