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Volumn 27, Issue 34, 2015, Pages 5028-5033

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Author keywords

in situ TEM; memristors; nanofilaments; resistive switching; valence change memories (VCM)

Indexed keywords

DEFECTS; ELECTRON TRANSPORT PROPERTIES; MEMRISTORS; NANOSTRUCTURES; OXYGEN; PASSIVE FILTERS; VACANCIES;

EID: 84941023587     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201502758     Document Type: Article
Times cited : (191)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.