Resistive switching characteristics of a Pt nanoparticle-embedded SiO 2-based memory

Thin Solid Films

Volumn 529, Issue , 2013, Pages 107-110

  Liu, Chih Yi ^a   Huang, Jyun Jie ^a   Lai, Chun Hung ^b  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

Memory; Nanoparticle; Resistive switching; SiO2

Indexed keywords

ELECTROCHEMICAL REACTIONS; FILAMENT FORMATION; LOCAL ELECTRIC FIELD; NON-UNIFORM DISTRIBUTION; OPERATING VOLTAGE; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SIO2;

DATA STORAGE EQUIPMENT; ELECTRIC FIELDS; NANOPARTICLES; SWITCHING SYSTEMS;

PLATINUM;

EID: 84873701121     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.108     Document Type: Conference Paper

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