Effect of dislocation density on efficiency curves in InGaN/GaN multiple quantum well light-emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8278, Issue , 2012, Pages

  Harada, Yoshiyuki ^a   Hikosaka, Toshiki ^a   Kimura, Shigeya ^a   Sugai, Maki ^a   Nago, Hajime ^a   Tachibana, Koichi ^a   Sugiyama, Naoharu ^a   Nunoue, Shinya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

external quantum efficiency; InGaN; light emitting diodes; rate equation model; threading dislocation density

Indexed keywords

A-COEFFICIENT; ACTIVE REGIONS; BLUE LEDS; DENSITY RANGE; EFFECT OF DISLOCATIONS; EFFICIENCY CURVES; EXCITATION POWER; EXTERNAL QUANTUM EFFICIENCY; INGAN; INGAN/GAN; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE PROCESS; PEAK SHIFT; PL INTENSITY; RATE EQUATION MODEL; RATE EQUATIONS; SAPPHIRE SUBSTRATES; SHOCKLEY-READ-HALL; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES;

CURRENT DENSITY; DIODES; LIGHT EMISSION; LIGHTING; MATHEMATICAL MODELS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84857591051     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.907679     Document Type: Conference Paper

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