Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Applied Physics Letters

Volumn 104, Issue 24, 2014, Pages

  Bolat, S ^a   Ozgit Akgun, C ^a   Tekcan, B ^a   Biyikli, N ^a   Okyay, A K ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BUDGET CONTROL; CATHODES; CRYSTALLITE SIZE; ELECTRON SOURCES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PULSED LASER DEPOSITION; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS; ZINC SULFIDE;

CHANNEL LAYERS; DEVICE FABRICATIONS; GAN THIN FILMS; HOLLOW CATHODES; LOW TEMPERATURES; POLYCRYSTALLINE WURTZITE; PROCESS TEMPERATURE; SUBTHRESHOLD SWING;

THIN FILM TRANSISTORS;

EID: 84903218411     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4884061     Document Type: Article

References (21)

1. P. Parikh, U. K. Mishra, and Y. F. Wu, " AlGaN/GaN HEMTs-An overview of device operation and applications," Proc. IEEE 90 (6), 1022-1031 (2002). 10.1109/JPROC.2002.1021567
2. J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, " White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors," IEEE Photonics Technol. Lett. 15 (1), 18-20 (2003). 10.1109/LPT.2002.805852
3. S. J. Pearton, B. S. Kang, S. Kim, F. Ren, B. P. Gila, C. R. Abernathy, J. Lin, and S. N. G. Chu, " GaN-based diodes and transistors for chemical, gas, biological and pressure sensing," J. Phys.: Condens. Matter 16 (29), R961 (2004). 10.1088/0953-8984/16/29/R02
4. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, " High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN," Appl. Phys. Lett. 74 (5), 762-764 (1999). 10.1063/1.123303
5. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Ydkokawa, M. Yokoyama, N. Adachi, and M. Takikawa, presented at the IEEE International Electron Devices Meeting, IEDM '03 Technical Digest, 2003.
6. S. Nakamura, Y. Harada, and M. Seno, " Novel metalorganic chemical vapor deposition system for GaN growth," Appl. Phys. Lett. 58 (18), 2021-2023 (1991). 10.1063/1.105239
7. E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, " Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy," J. Appl. Phys. 82 (11), 5472-5479 (1997). 10.1063/1.365575
8. R. Chen, W. Zhou, and H. S. Kwok, " Top-gate thin-film transistors based on GaN channel layer," Appl. Phys. Lett. 100 (2), 022111 (2012). 10.1063/1.3676447
9. A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, and H. Fujioka, " Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates," Appl. Phys. Lett. 90 (4), 041908 (2007). 10.1063/1.2433758
10. 1-xN thin films at low temperatures," J. Mater. Chem. C 2 (12), 2123-2136 (2014). 10.1039/c3tc32418d
11. M. Ritala and M. Leskela, "Atomic layer deposition," in Handbook of Thin Film Materials (Academic Press, San Diego, CA, 2001), Vol. 1, p. 103.
12. R. A. Street, " Thin film transistors," Adv. Mater. 21 (20), 2007-2022 (2009). 10.1002/adma.200803211
13. R. A. Street, Technology and Applications of Amorphous Silicon (Springer, 2000).
14. U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S.-J. Cho, and H. Morkoç, " A comprehensive review of ZnO materials and devices," J. Appl. Phys. 98 (4), 041301 (2005). 10.1063/1.1992666
15. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, " Fully transparent ZnO thin film transistor produced at room temperature," Adv. Mater. 17 (5), 590-594 (2005). 10.1002/adma.200400368
16. R. L. Hoffman, B. J. Norris, and J. F. Wager, " ZnO-based transparent thin-film transistors," Appl. Phys. Lett. 82 (5), 733-735 (2003). 10.1063/1.1542677
17. R. Chen, W. Zhou, M. Zhang, and H. S. Kwok, " Bottom-gate thin-film transistors based on GaN active channel layer," IEEE Electron Device Lett. 34 (4), 517-519 (2013). 10.1109/LED.2013.2244556
18. C. Liu, S. Liu, S. Huang, and K. J. Chen, " Plasma-enhanced atomic layer deposition of AlN epitaxial thin film for AlN/GaN heterostructure TFTs," IEEE Electron Device Lett. 34 (9), 1106-1108 (2013). 10.1109/LED.2013.2271973
19. L. Pang and K. Kim, " Improvement of Ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme," Mater. Sci. Semicond. Process. (published online). 10.1016/j.mssp.2013.10.011
20. 3 atomic layer deposition," Chem. Mater. 16 (4), 639-645 (2004). 10.1021/cm0304546
21. R. B. M. Cross and M. M. De Souza, " Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89 (26), 263513 (2006). 10.1063/1.2425020