Effect of BCl 3 concentration and process pressure on the GaN mesa sidewalls in BCl 3/Cl 2 based inductively coupled plasma etching

Vacuum

Volumn 86, Issue 12, 2012, Pages 1844-1849

  Rawal, D S ^a   Sehgal, B K ^a   Muralidharan, R ^a   Malik, H K ^b   Dasgupta, Amitava ^c  

^a DRDO   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Etching; GaN; ICP; Mesa; Photoresist; Selectivity; Sidewall

Indexed keywords

CHAMBER PRESSURE; CHEMICAL COMPONENT; ETCH RATES; FLOWRATE RATIO; GAN; ICP; ICP ETCHING; LOWER PRESSURES; MESA; MESA ETCHING; MESA SIDEWALL; PHOTORESIST MASK; PROCESS PRESSURE; SIDEWALL;

CATALYST SELECTIVITY; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS;

CHLORINE COMPOUNDS;

EID: 84862984826     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.04.018     Document Type: Article

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