Comparison of germanium and silicon dry etching by using inductively coupled BCl3 plasma

Journal of the Korean Physical Society

Volumn 56, Issue 1, 2010, Pages 59-65

  Kim, T S ^a   Yang, H Y ^a   Choi, S S ^a   Jeong, T S ^a   Kang, S ^a   Shim, K H ^a  

^a Chonbuk National University   (South Korea)

Author keywords

BCl3; Etching; Ge; ICP; Plasma

Indexed keywords

EID: 77954847730     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.56.59     Document Type: Article

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