Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl 2/Ar/BCl3 inductively coupled plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 2, 2004, Pages 407-412

  Han, Yanjun ^a   Xue, Song ^a   Wu, Tong ^a   Wu, Zhen ^a   Guo, Wenping ^a   Luo, Yi ^a   Hao, Zhibiao ^a   Sun, Changzheng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPOSITION; CONCENTRATION (PROCESS); DESORPTION; ETCHING; FIELD EMISSION CATHODES; GROWTH (MATERIALS); INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; MIXTURES; MORPHOLOGY; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

CHEMICAL INERTNESS; NONSELECTIVE ETCHING; ROOT-MEAN-SQUARE ROUGHNESS;

HETEROJUNCTIONS;

EID: 1842608445     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1641054     Document Type: Article

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