Effects of type of reactor, crystallinity of SiC, and N F3 gas pressure on etching rate and smoothness of SiC surface using N F3 gas plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 6, 2009, Pages 1369-1376

  Tasaka, A ^a   Yamada, H ^a   Nonoyama, T ^a   Kanatani, T ^a   Kotaka, Y ^a   Tojo, T ^b   Inaba, M ^a  

^a DOSHISHA UNIVERSITY   (Japan)

^b Toyo Tanso Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON RICH; CRYSTALLINITIES; ETCHING RATE; GAS PLASMA; GAS PRESSURES; GRAPHITE CRYSTALLITES; POLYCRYSTALLINE; POLYCRYSTALLINE SIC; RAMAN ANALYSIS; SINGLE-CRYSTALLINE; SMOOTH SURFACE;

CRYSTALLITES; GASES; GRAPHITE; REACTIVE ION ETCHING; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71049154962     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3222938     Document Type: Article

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