Dry etching of SiC in inductively coupled Cl2/Ar plasma

Journal of Physics D: Applied Physics

Volumn 37, Issue 13, 2004, Pages 1809-1814

  Jiang, Liudi ^a   Plank, N O V ^a   Blauw, M A ^b   Cheung, R ^a   Van Der Drift, E ^b  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CURRENT DENSITY; DRY ETCHING; MICROELECTROMECHANICAL DEVICES; PRESSURE EFFECTS; SUBSTRATES; THERMAL EFFECTS;

AVERAGE ION ENERGY; ETCH RATE; ION CURRENT DENSITY;

INDUCTIVELY COUPLED PLASMA;

EID: 3142783102     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/13/012     Document Type: Article

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