Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

Microelectronic Engineering

Volumn 98, Issue , 2012, Pages 222-225

  Sun, Jian ^a   Kosel, Jürgen ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Etching; III V semiconductor; InAs; Inductive coupled plasma; InSb; Microfabrication

Indexed keywords

ETCH RATES; ETCHING RATE; GAS COMPOSITIONS; II-IV SEMICONDUCTORS; INAS; INDUCTIVE COUPLED PLASMA; INSB; OPTIMIZED PROCESS; POLISHED WAFERS; PROCESS PRESSURE; ROOM TEMPERATURE; SMOOTH SURFACE;

ETCHING; INDIUM ARSENIDE; INDUCTIVELY COUPLED PLASMA; MICROFABRICATION;

INDIUM ANTIMONIDES;

EID: 84865585382     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.07.018     Document Type: Conference Paper

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