Analysis of nonselective plasma etching of AlGaN by C F4 Ar Cl2

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Kuryatkov, V ^a   Borisov, B ^a   Saxena, J ^a   Nikishin, S A ^a   Temkin, H ^a   Patibandla, S ^b   Menon, L ^b   Holtz, M ^b  

^a Texas Tech University   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED PLASMA; DOPING PROPERTIES; NONSELECTIVE PLASMA ETCHING; SURFACE UNIFORMITY;

ALUMINUM NITRIDE; ARGON; ATOMIC FORCE MICROSCOPY; CHLORINE; CORRELATION METHODS; DEGRADATION; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; PHOTODETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SUPERLATTICES; SURFACE ROUGHNESS;

PLASMA ETCHING;

EID: 17444404165     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866490     Document Type: Article

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