Low-damage etching of silicon carbide in Cl2-based plasmas

Journal of the Electrochemical Society

Volumn 149, Issue 7, 2002, Pages

  Khan, F A ^a   Zhou, L ^a   Kumar, V ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHLORINE; FLUORINE; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; STOICHIOMETRY;

ETCH RATES;

SILICON CARBIDE;

EID: 0036641196     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1482059     Document Type: Article

References (7)