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Volumn 645, Issue , 2015, Pages 230-234

Electronic structure analysis of GaN films grown on r- and a-plane sapphire

Author keywords

Electronic structure; GaN; UPS; XPS

Indexed keywords

BAND STRUCTURE; ELECTRON AFFINITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; PHOTOEMISSION; SAPPHIRE; SURFACE CHEMISTRY; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84929353545     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.04.131     Document Type: Article
Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.