The defect character of GaN growth on r -plane sapphire

Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

  Smalc Koziorowska, J ^a,b   Tsiakatouras, G ^c,d   Lotsari, A ^a   Georgakilas, A ^c,d   Dimitrakopulos, G P ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY OF CRETE   (Greece)

^d INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; BASAL STACKING FAULTS; GAN GROWTH; HETEROEPITAXIAL; IN-PLANE DIRECTION; INTERFACIAL DEFECT; INTERFACIAL DISLOCATIONS; LATTICE DISLOCATIONS; LOW-ANGLE TILT; MISFIT DISLOCATIONS; MISORIENTATIONS; NANOFACETS; NON-POLAR; ORIENTATION VARIANTS; OUT-OF-PLANE; PARTIAL DISLOCATIONS; PLANE SAPPHIRE; RELAXATION MECHANISM; SEMIPOLAR; THREADING DISLOCATION; TOPOLOGICAL THEORY; TWIN BOUNDARIES;

DEFECTS; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NANOCRYSTALS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

STACKING FAULTS;

EID: 77951567794     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3369439     Document Type: Article

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