Direct growth of a-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 2, 2007, Pages 555-559

  Araki, Masahiro ^a   Mochimizo, Noriaki ^a   Hoshino, Katsuyuki ^a   Tadatomo, Kazuyuki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

a plane GaN; Buffer layer; Direct growth; MOVPE; Non polar; r plane sapphire; Two step growth

Indexed keywords

BUFFER LAYERS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE;

DIRECT GROWTH; TWO-STEP GROWTH;

GALLIUM NITRIDE;

EID: 34547878769     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.555     Document Type: Article

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