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Volumn 32, Issue 5, 2011, Pages 626-628

High-performance microwave gate-recessed AlGaN/AlN/GaN MOS-HEMT with 73% power-added efficiency

Author keywords

AlGaN AlN GaN metal oxide semiconductor heterostructure high electron mobility transistor (MOS HEMT); gate recessed; L gate field plate; power amplifier

Indexed keywords

ALGAN/ALN/GAN; ALGAN/GAN HEMTS; CURRENT GAIN CUTOFF FREQUENCY; DRAIN BIAS; EXTRINSIC TRANSCONDUCTANCE; GAN HEMTS; GATE LENGTH; GATE PERIPHERY; GATE RECESSED; GHZ FREQUENCIES; HETEROSTRUCTURES; HIGH MOBILITY; L-GATE FIELD PLATE; MAXIMUM OSCILLATION FREQUENCY; METAL OXIDE SEMICONDUCTOR; OUTPUT POWER DENSITY; POWER PERFORMANCE; POWER-ADDED EFFICIENCY; S-PARAMETER MEASUREMENTS; SIC SUBSTRATES; STATE OF THE ART;

EID: 79955541472     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2118736     Document Type: Article
Times cited : (139)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.