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Y. F.Wu, A. Saxler,M.Moore, R. P. Smith, S. Sheppard, P.M. Chavarkar, T.Wisleder, U. K.Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
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23844472241
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Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
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M. Asif Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, "AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor," IEEE Electron Device Lett., vol. 21, no. 2, pp. 63-65, Feb. 2000. (Pubitemid 30562995)
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M. Asif Khan, G. Simin, J. Yang, J. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu, and A. Tarakji, "Insulating gate III-N heterostructure field effect transistors for high-power microwave and switching applications," IEEE Trans. Microw. Theory Tech., vol. 51, no. 2, pp. 624-633, Feb. 2003.
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