메뉴 건너뛰기




Volumn 114, Issue 23, 2013, Pages

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN RELAXATION; BASAL STACKING FAULTS; DEGREE OF POLARIZATION; DISPLAY APPLICATION; ELECTRONIC TRANSITION; OSCILLATOR STRENGTHS; PERTURBATION APPROACH; PRISMATIC STACKING FAULTS;

EID: 84891411473     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4851755     Document Type: Article
Times cited : (15)

References (17)
  • 1
    • 12444250972 scopus 로고    scopus 로고
    • 2nd ed. (Cambridge University Press, Cambridge).
    • E. Fred Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006).
    • (2006) Light-Emitting Diodes
    • Fred Schubert, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.