HfO2 on UV'O3 exposed transition metal dichalcogenides: Interfacial reactions study

2D Materials

Volumn 2, Issue 1, 2015, Pages

  Azcatl, Angelica ^a   Kc, Santosh ^a   Peng, Xin ^a   Lu, Ning ^a   McDonnell, S Stephen ^a   Qin, Xiaoye ^a   De Dios, Francis ^a   Rafik, Addou ^a   Kim, Jiyoung ^a   Kim, Moon J ^a   Cho, Kyeongjae ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

HfO2; high k; MoS2; MoSe2; WSe2

Indexed keywords

ATOMIC LAYER DEPOSITION; HAFNIUM OXIDES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SURFACE CHEMISTRY; TRANSITION METALS; X RAY PHOTOELECTRON SPECTROSCOPY;

HFO2; HIGH- K; MOS2; MOSE2; WSE2;

SELENIUM COMPOUNDS;

EID: 84929215116     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/1/014004     Document Type: Article

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