Characterization of reactively sputtered molybdenum oxide films for solar cell application

Journal of Applied Physics

Volumn 114, Issue 1, 2013, Pages

  Simchi, H ^a,b   McCandless, B E ^a   Meng, T ^a   Boyle, J H ^a,b   Shafarman, W N ^a,b  

^a UNIVERSITY OF DELAWARE   (United States)

^b DUPONT COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT OXYGEN CONCENTRATIONS; BAND-TO-BAND TRANSITION; GLANCING INCIDENCE X-RAY DIFFRACTIONS; OXYGEN PARTIAL PRESSURE; POST DEPOSITION ANNEALING; POST DEPOSITION ANNEALS; RADIO-FREQUENCY SPUTTERING; SOLAR-CELL APPLICATIONS;

AMORPHOUS FILMS; ANNEALING; DEPOSITION; ENERGY GAP; OPACITY; OXIDE FILMS; PARTIAL PRESSURE; PHOTOELECTRONS; POSITIVE IONS; SPECTROPHOTOMETRY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLYBDENUM OXIDE;

EID: 84880904806     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812587     Document Type: Article

References (43)

1. M. R. Smith, L. Zhang, S. A. Driscoll, and U. S. Ozkan, Catalysis Lett. 19, 1 (1993). 10.1007/BF00765197
2. C. V. Ramana and C. M. Julien, Chem. Phys. Lett. 428, 114 (2006). 10.1016/j.cplett.2006.06.117
3. T. S. Sain and G. B. Reddy, J. Appl. Phys. 98, 026104 (2005). 10.1063/1.1949271
4. K. Bange, Sol. Energy Mater. Sol. Cells 58, 1 (1999). 10.1016/S0927-0248(98)00196-2
5. C. G. Granqvist, Appl. Phys. A 57, 19 (1993). 10.1007/BF00331211
6. D. Mutschall, K. Holzner, and E. Obermeier, Sens. Actuators B 36, 320 (1996). 10.1016/S0925-4005(97)80089-5
7. H. Lee, S. W. Cho, K. Han, P. E. Jeon, C. N. Whang, K. Jeong, K. Cho, and Y. Yi, Appl. Phys. Lett. 93, 043308 (2008). 10.1063/1.2965120
8. V. Shrotriya, G. Li, Y. Yao, C. W. Chu, and Y. Yang, Appl. Phys. Lett. 88, 073508 (2006). 10.1063/1.2174093
9. T. Hori, T. Shibata, V. Kittichungchit, H. Moritou, J. Sakai, H. Kubo, A. Fujii, and M. Ozaki, Thin Solid Films 518, 522 (2009). 10.1016/j.tsf.2009.07. 044
10. T. Aoki, T. Matsushita, K. Mishiro, A. Suzuki, and M. Okuda, Thin Solid Films 517, 1482 (2008). 10.1016/j.tsf.2008.09.060
11. Y. J. Lee, W. T. Nichols, D. G. Kim, and Y. D. Kim, J. Phys. D: Appl. Phys. 42, 115419 (2009). 10.1088/0022-3727/42/11/115419
12. K. Galatsis, Y. Li, W. Wlodarski, C. Cantalini, M. Passacantando, and S. Santucci, J. Sol-Gel Sci. Technol. 26, 1097 (2003). 10.1023/A:1020710808151
13. L. Boudaouda, N. Benramdanea, R. Desfeuxb, B. Khelifac, and C. Mathieu, Catal. Today 113, 230 (2006). 10.1016/j.cattod.2005.11.072
14. R. Sivakumar, R. Gopalakrishnan, M. Jayachandran, and C. Sanjeeviraja, Curr. Appl. Phys. 7, 51 (2007). 10.1016/j.cap.2005.10.001
15. J. Okumua, F. Koerfer, C. Salinga, T. P. Pedersen, and M. Wuttig, Thin Solid Films 515, 1327 (2006). 10.1016/j.tsf.2006.03.045
16. C. V. Ramana, V. V. Atuchin, V. G. Kesler, V. A. Kochubey, L. D. Pokrovsky, V. Shutthanandhan, U. Becker, and R. C. Ewing, Appl. Surf. Sci. 253, 5368 (2007). 10.1016/j.apsusc.2006.12.012
17. I. Navas, R. Vinodkumar, K. J. Lethy, A. P. Detty, V. Ganesan, V. Sathe, and V. P. MahadevanPillai, J. Phys. D: Appl. Phys. 42, 175305 (2009). 10.1088/0022-3727/42/17/175305
18. M. Ohring, The Materials Science of Thin Films (Academic Press, London, 1992), p. 121.
19. ICDD DDView 4.8.3.4 using PDF-2/Release 2008 RDB 2.0804, The International Center for Diffraction Data, Newton Square, PA. The cards used were (01-089-1554) and (00-005-0508).
20. L. Brewer and R. H. Lamoreaux, Bull. Alloy Phase Diagrams 1, 85 (1980). 10.1007/BF02881199
21. P. E. Russell, O. Jamjoum, R. K. Ahrenkiel, and L. L. Kazmerski, Appl. Phys. Lett. 40, 995 (1982). 10.1063/1.92955
22. N. Kohara, S. Nishiwaki, Y. Hashimoto, T. Negami, and T. Wada, Sol. Energy Mater. Sol. Cells 67, 209 (2001). 10.1016/S0927-0248(00)00283-X
23. R. Scheer and H. W. Schock, Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices (Wiley-VCH Verlag Co. KGaA, Weinheim, Germany, 2011), p. 156.
24. D. K. Schroder, " Contact resistance and Schottky barriers.," in Semiconductor Material and Device Characterization (John Wiley Sons Ltd, New Jersey, 2006), Chap., p. 128.
25. N. Oka, H. Watanabe, Y. Sato, Hiroshi Yamaguchi, N. Ito, H. Tsuji, and Y. Shigesato, J. Vac. Sci. Technol. A 28, 886 (2010). 10.1116/1.3328822
26. V. Nirupama, M. Chandrasekhar, P. Radhika, B. Sreedhar, and S. Uthanna, J. Optoelectron. Adv. Mater. 11, 320 (2009).
27. X. Fan, G. Fang, P. Qin, N. Sun, N. Liu, Q. Zheng, F. Cheng, L. Yuan, and X. Zhao, J. Phys. D: Appl. Phys. 44, 045101 (2011). 10.1088/0022-3727/44/4/ 045101
28. B. V. Crist, Handbook of Monochromatic XPS Spectra (John Wiley Sons Ltd, England, 2000), pp. 408-412.
29. J. Heller, Thin Solid Films 17, 163 (1973). 10.1016/0040-6090(73)90125-9
30. S. H. Mohamed, O. Kappertz, J. M. Ngariya, T. P. L. Pederson, D. Drese, and M. Wuttig, Thin Solid Films 429, 135 (2003). 10.1016/S0040-6090(03)00068-3
31. T. S. Sian and G. B. Reddy, Sol. Energy Mater. Sol. Cells 82, 375 (2004). 10.1016/j.solmat.2003.12.007
32. P. F. Carcia and E. M. Mc Carron, Thin Solid Films 155, 53 (1987). 10.1016/0040-6090(87)90452-4
33. V. Nirupama, K. R. Gunasekhar, B. Sreedhar, and S. Uthanna, Curr. Appl. Phys. 10, 272 (2010). 10.1016/j.cap.2009.06.005
34. O. M. Hussain, K. Srinivasa Rao, K. V. Madhuri, C. V. Ramana, B. S. Naidu, S. Pai, J. John, and R. Pinto, Appl. Phys. A: Mater. Sci. Process. 75, 417 (2002). 10.1007/s003390100994
35. V. K. Sabhapathi, O. Md. Hussain, P. S. Reddy, K. T. Ramakrishna Reddy, S. Uthanna, B. S. Naidu, and P. Jayarama Reddy, Phys. Status Solidi A 148, 167 (1995). 10.1002/pssa.2211480114
36. J. I. Pankove, Optical Processes in Semiconductors (Dover Publications, New York, 1971), p. 34.
37. M. Itoh, K. Hayakawa, and S. Oishi, J. Phys.: Condens. Matter 13, 6853 (2001). 10.1088/0953-8984/13/31/319
38. S. K. Deb and J. A. Chopoorian, J. Appl. Phys. 37, 4818 (1966). 10.1063/1.1708145
39. S. Uthanna, V. Nirupama, and J. F. Pierson, Appl. Surf. Sci. 256, 3133 (2010). 10.1016/j.apsusc.2009.11.086
40. M. Dieterle, G. Weinberg, and G. Mestl, Phys. Chem. Chem. Phys. 4, 812 (2002). 10.1039/b107012f
41. K. V. Madhuri, K. Sinivasarao, S. Uthanna, B. S. Naidu, and O. M. Hussain, J. Indian Inst. Sci. 81, 653 (2001).
42. N. Miyata and S. Akiyoshi, J. Appl. Phys. 58, 1651 (1985). 10.1063/1.336307
43. P. D. Fochs, Proc. R. Soc. London, Ser. B 69, 70 (1956). 10.1088/0370-1301/69/1/309