Van der Waals heterostructure of phosphorene and graphene: Tuning the schottky barrier and doping by electrostatic gating

Physical Review Letters

Volumn 114, Issue 6, 2015, Pages

  Padilha, J E ^a   Fazzio, A ^a   Da Silva, Antônio J R ^a,b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; VAN DER WAALS FORCES;

BI-LAYER; IMPORTANT FEATURES; NEW DEVICES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SINGLE LAYER; STRUCTURAL AND ELECTRONIC PROPERTIES; VAN DER WAALS;

GRAPHENE;

EID: 84922879192     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.114.066803     Document Type: Article

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