High on-off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing

ACS Applied Materials and Interfaces

Volumn 7, Issue 13, 2015, Pages 7382-7388

  Sun, Yihui ^a   Yan, Xiaoqin ^a   Zheng, Xin ^a   Liu, Yichong ^a   Zhao, Yanguang ^a   Shen, Yanwei ^a   Liao, Qingliang ^a   Zhang, Yue ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Arrhenius activation theory; Forming free; Oxygen vacancies drifting; Resistive switching; Surface hydrogen annealing

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CHEMICAL ACTIVATION; GOLD COMPOUNDS; HYDROGEN; II-VI SEMICONDUCTORS; MEMRISTORS; NANORODS; OXIDE MINERALS; SURFACE TREATMENT; SWITCHING; SWITCHING THEORY; ZINC OXIDE;

ARRHENIUS; HYDROGEN ANNEALING TREATMENT; MEMORY APPLICATIONS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SPACE CHARGE LIMITED CONDUCTION; SURFACE HYDROGEN; SWITCHING PROPERTIES;

OXYGEN VACANCIES;

EID: 84926674122     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b01080     Document Type: Article

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