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Applied Physics Letters

Volumn 104, Issue 6, 2014, Pages

Non-volatile, electric control of magnetism in Mn-substituted ZnO

(5) Wang, X L a,b Shao, Q a Leung, C W c Lortz, R d Ruotolo, A a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF SEMICONDUCTORS (China)

c HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

d HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MAGNETIC MOMENTS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

BISTABLE SWITCHING; ELECTRIC CONTROL; FERROMAGNETIC OXIDES; LATERAL SIZES; METALLIC ELECTRODES; RESISTIVE MEMORY; RESISTIVE STATE; SEMICONDUCTOR OXIDES;

II-VI SEMICONDUCTORS;

EID: 84902470591 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4865428 Document Type: Article

Times cited : (36)

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