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Nanoscale

Volumn 6, Issue 1, 2014, Pages 400-404

Random telegraph noise and resistance switching analysis of oxide based resistive memory

(3) Choi, Shinhyun a Yang, Yuchao a Lu, Wei a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN AND OPERATIONS; HIGH-RESISTANCE STATE; RANDOM TELEGRAPH NOISE; RESISTANCE SWITCHING EFFECT; RESISTANCE SWITCHING MECHANISMS; RESISTIVE RANDOM ACCESS MEMORY (RRAM); SEMICONDUCTOR-TO-METAL TRANSITIONS; TEMPERATURE DEPENDENT;

RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; TIME DOMAIN ANALYSIS;

SWITCHING;

EID: 84890245905 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr05016e Document Type: Article

Times cited : (110)

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