Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

  Bai, Yue ^a   Wu, Huaqiang ^a   Zhang, Ye ^a   Wu, Minghao ^a   Zhang, Jinyu ^a   Deng, Ning ^a   Qian, He ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER STRUCTURE; CAPACITANCE VOLTAGE; CONDUCTIVE FILAMENTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; LOW-POWER CONSUMPTION; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS;

CHEMICAL ANALYSIS; CMOS INTEGRATED CIRCUITS;

SWITCHING SYSTEMS;

EID: 84877265401     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803462     Document Type: Article

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