In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

Journal of Applied Physics

Volumn 115, Issue 20, 2014, Pages

  Sowinska, Malgorzata ^a   Bertaud, Thomas ^a   Walczyk, Damian ^a   Thiess, Sebastian ^b   Calka, Pauline ^a   Alff, Lambert ^c   Walczyk, Christian ^a   Schroeder, Thomas ^a,d  

^a IHP   (Germany)

^b DESY   (Germany)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; OXYGEN VACANCIES; SEGREGATION (METALLOGRAPHY); SWITCHING SYSTEMS; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

CONDUCTING FILAMENT; DIRECT CURRENT VOLTAGE; EXPERIMENTAL MATERIALS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; INTERFACE CHEMISTRY; MATERIALS ENGINEERING; OXYGEN VACANCY DEFECTS; RESISTIVE RANDOM ACCESS MEMORY (RRAM);

COMPLIANCE CONTROL;

EID: 84901989639     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4879678     Document Type: Article

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