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Applied Physics Letters

Volumn 106, Issue 8, 2015, Pages

Low-frequency noise in MoSe2 field effect transistors

(6) Das, Suprem R a Kwon, Jiseok a Prakash, Abhijith a Delker, Collin J b Das, Saptarshi a,c Janes, David B a

a Purdue University (United States)

b SANDIA NATIONAL LABORATORIES (United States)

c ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CARBON NANOTUBES; NANOELECTRONICS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE; TRANSISTORS; YARN;

FIELD EFFECT TRANSISTOR (FETS); LOW-FREQUENCY NOISE; MOBILITY FLUCTUATIONS; NANOELECTRONIC DEVICES; ORDERS OF MAGNITUDE; PRESSURE AND TEMPERATURE; SEMICONDUCTOR CHANNELS; TRANSISTOR CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 84924046600 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4913714 Document Type: Article

Times cited : (52)

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