1/f noise in MoS2 field effect transistors with various layer thicknesses

Materials Research Society Symposium Proceedings

Volumn 1701, Issue , 2014, Pages

  Das, Suprem R ^a   Kwon, Jiseok ^a   Janes, David B ^a  

^a Purdue University   (United States)

Author keywords

electrical properties; nanoscale; Raman spectroscopy

Indexed keywords

ELECTRIC PROPERTIES; GRAPHENE; MOLYBDENUM COMPOUNDS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICES; TRANSISTORS;

AMBIENT CONDITIONS; DIGITAL APPLICATIONS; FIELD EFFECT TRANSISTOR (FETS); HOOGE PARAMETERS; NANO SCALE; NOISE MEASUREMENTS; NUMBER OF LAYERS; TRANSPORT MECHANISM;

FIELD EFFECT TRANSISTORS;

EID: 84924455313     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2014.554     Document Type: Conference Paper

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