Low-frequency noise contributions from channel and contacts in InAs nanowire transistors

IEEE Transactions on Electron Devices

Volumn 60, Issue 9, 2013, Pages 2900-2905

  Delker, Collin J ^a   Zi, Yunlong ^a   Yang, Chen ^a   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Contact resistance; indium arsenide; low frequency noise; nanowire transistors

Indexed keywords

DEVICE PERFORMANCE; ELECTRONICS APPLICATIONS; HOOGE PARAMETERS; LOW-FREQUENCY NOISE; NANOWIRE TRANSISTORS; NOISE COMPONENTS; NOISE PERFORMANCE; PASSIVATION LAYER;

CONTACT RESISTANCE; INDIUM ARSENIDE; PASSIVATION; POLYMETHYL METHACRYLATES; TRANSISTORS;

NANOWIRES;

EID: 84883291576     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2274009     Document Type: Article

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