Valley-dependent spin polarization in bulk MoS 2 with broken inversion symmetry

Nature Nanotechnology

Volumn 9, Issue 8, 2014, Pages 611-617

  Suzuki, R ^a   Sakano, M ^a   Zhang, Y J ^a   Akashi, R ^a   Morikawa, D ^b   Harasawa, A ^a   Yaji, K ^a   Kuroda, K ^c   Miyamoto, K ^c   Okuda, T ^c   Ishizaka, K ^a   Arita, R ^a,b   Iwasa, Y ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEGREES OF FREEDOM (MECHANICS); GRAPHENE; LANDFORMS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE SPECTROSCOPY; SPIN POLARIZATION;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; CIRCULARLY POLARIZED; DIRECT OBSERVATIONS; ELECTRIC MANIPULATION; INVERSION SYMMETRY; NON-CENTROSYMMETRIC; SPIN ORBIT INTERACTIONS; TRANSITION METAL DICHALCOGENIDES;

TRANSITION METALS;

TRANSITION ELEMENT; TRANSITION METAL DICHALCOGENIDE; UNCLASSIFIED DRUG;

ACCELERATION; ARTICLE; CIRCULAR DICHROISM; CONTROLLED STUDY; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON; ELECTRON DIFFRACTION; FLAME PHOTOMETRY; PHOTOLUMINESCENCE; POLARIZATION; PREDICTION; PRIORITY JOURNAL; SPIN AND ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; VALLEY DEPENDENT OUT OF PLANE SPIN POLARIZATION;

EID: 84905858727     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.148     Document Type: Article

References (45)

1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147-150 (2011
2. Podzorov, V., Gershenson, M. E., Kloc, Ch., Zeis, R. & Bucher, E. High-mobility field-effect transistors based on transition metal dichalcogenides. Appl. Phys. Lett. 84, 3301 (2004
3. Zhang, YJ., Ye, J. T., Matsuhashi, Y. & Iwasa, Y. Ambipolar MoS2 thin flake transistors. Nano Lett. 12, 1136-1140 (2012
4. Braga, D., Lezama, I G., Berger, H. & Morpurgo, A. F. Quantitative determination of the band gap of WS2 with ambipolar ionic liquid-gated transistors. Nano Lett. 12, 5218-5223 (2012
5. Ye, J. T., Zhang, Y. J., Akashi, R., Bahramy, M. S., Arita, R. & Iwasa, Y. Superconducting dome in a gate-Tuned band insulator. Science 338, 1193-1196 (2012
6. Taniguchi, K., Matsumoto, A., Shimotani, H. & Takagi, H. Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS2. Appl. Phys. Lett. 101, 042603 (2012
7. Yuan, H. T. et al. Zeeman-Type spin splitting controlled by an electric field. Nature Phys. 9, 563-569 (2013
8. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010
9. Splendiani, A et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010
10. Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490-493 (2012
11. Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494-498 (2012
12. Sallen, G. et al. Robust optical emission polarization in MoS2 monolayers through selective valley excitation. Phys. Rev. B 86, 081301 (2012
13. Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012
14. Takashina, K., Ono, Y., Fujiwara, A., Takahashi, Y. & Hirayama, Y. Valley polarization in Si(100) at zero magnetic field. Phys. Rev. Lett. 96, 236801 (2006
15. Isberg, J. et al. Generation, transport and detection of valley-polarized electrons in diamond. Nature Mater. 12, 760-764 (2013
16. Shkolnikov, Y. P., De Poortere, E. P., Tutuc, E. & Shayegan, M. Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field. Phys. Rev. Lett. 89, 226805 (2002
17. Gunawan, O. et al. Valley susceptibility of an interacting two-dimensional electron system. Phys. Rev. Lett. 97, 186404 (2006
18. Gunawan, O. et al. Spin-valley phase diagram of the two-dimensional metal-insulator transition. Nature Phys. 3, 388-391 (2007
19. Zhu, Z., Collaudin, A., Fauque, B., Kang, W. & Behnia K. Field-induced polarization of Dirac valleys in bismuth. Nature Phys. 8, 89-94 (2012
20. Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007
21. Rycerz, A., Tworzydlo, J. & Beenakker, C. W. J. Valley filter and valley valve in graphene. Nature Phys. 3, 172-175 (2007
22. Yao, W., Xiao, D. & Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking. Phys. Rev. B 77, 235406 (2008
23. Gunlycke, D. & White, C. T. Graphene valley filter using a line defect. Phys. Rev. Lett. 106, 136806 (2011
24. Xiao, D., Liu, G., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012
25. Zhu, C. R. et al. Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2. Phys. Rev. B 88, 121301 (2013
26. Wu, S et al. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2. Nature Phys. 9, 149-153 (2013
27. Jones, A M. et al. Spin-layer locking effects in optical orientation of exciton spin in bilayer WSe2. Nature Phys. 10, 130-134 (2014
28. Wilson, J. A. & Yoffe, A. D. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 18, 193-334 (1969
29. Wildervanck, J. C. Chalcogenides of Molybdenum, Tungsten, Technetium and Rhenium. PhD thesis, Univ. of Groningen (1970
30. Zhu, Z. Y., Cheng, Y. C. & Schwingenschlogl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011
31. Lee, Y. et al. Synthesis of large-Area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012
32. Wu, S. et al. Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization. ACS Nano 7, 2768-2772 (2013
33. Liu, K-Ket al. Growth of large-Area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538-1544 (2012
34. Towle, L. C., Oberbeck, V., Brown, B. E. & Stajdohar, R. E. Molybdenum diselenide: Rhombohedral high pressure-high temperature polymorph. Science 154, 895-896 (1966
35. Al-hilli, A. A. & Evans, B. L. The preparation and properties of transition metal dichalcogenide single crystals. J. Cryst. Growth 15, 93-101 (1972
36. Beal, A. R., Knights, J. C. & Liang, W. Y. Transmission spectra of some transition metal dichalcogenides. II. Group VIA: Trigonal prismatic coordination. J. Phys. C 5, 3540-3551 (1972
37. Coehoorn, R. et al. Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy. Phys. Rev. B 35, 6195-6202 (1987
38. Jin, W. et al. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys. Rev. Lett. 111, 106801 (2013
39. Ishizaka, K. et al. Giant Rashba-Type spin splitting in bulk BiTeI. Nature Mater. 10, 521-526 (2011
40. Okuda, T. et al. Efficient spin resolved spectroscopy observation machine at Hiroshima Synchrotron Radiation Center. Rev. Sci. Instrum. 82, 103302 (2011
41. Meier, F., Dil, H., Lobo-Checa, J., Patthey, L. & Osterwalder, J. Quantitative vectorial spin analysis in angle-resolved photoemission: Bi/Ag(111) and Pb/Ag(111). Phys. Rev. B 77, 165431 (2008
42. Sakamoto, K. et al. Valley spin polarization by using the extraordinary Rashba effect on silicon. Nature Commun. 4, 2073 (2013
43. Lee, C et al. Anomalous lattice vibrations of single-And few-layer MoS2. ACS Nano 4, 2695-2700 (2010
44. Li, H. et al. From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 22, 1385-1390 (2012
45. Gong, Z. et al. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers. Nature Commun. 4, 2053 (2013.