Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection

ACS Nano

Volumn 8, Issue 8, 2014, Pages 8582-8590

  Chang, Yung Huang ^a   Zhang, Wenjing ^b,c   Zhu, Yihan ^d   Han, Yu ^d   Pu, Jiang ^e   Chang, Jan Kai ^f   Hsu, Wei Ting ^g   Huang, Jing Kai ^a   Hsu, Chang Lung ^a   Chiu, Ming Hui ^d   Takenobu, Taishi ^e   Li, Henan ^h   Wu, Chih I ^f   Chang, Wen Hao ^g   Wee, Andrew Thye Shen ^b   Li, Lain Jong ^a,d  

^a ACADEMIA SINICA   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c SHENZHEN UNIVERSITY   (China)

^d KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^e WASEDA UNIVERSITY   (Japan)

^f NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^g NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^h NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

photoresponse; transition metal dichalcogenides; two dimensional materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; NANOCRYSTALLINE MATERIALS; OPTOELECTRONIC DEVICES; SULFUR COMPOUNDS; TEMPERATURE; TRANSITION METALS;

CHEMICAL VAPOR DEPOSITION METHODS; LOW TEMPERATURE PHOTOLUMINESCENCE; MOLYBDENUM DISELENIDE; MOLYBDENUM DISULFIDE; OPTOELECTRONIC PROPERTIES; PHOTORESPONSES; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL MATERIALS;

SELENIUM COMPOUNDS;

EID: 84906690117     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503287m     Document Type: Article

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