Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

Journal of Applied Physics

Volumn 114, Issue 20, 2013, Pages

  Li, J ^a   Vitusevich, S A ^a,c   Petrychuk, M V ^b   Pud, S ^a   Offenhausser A ^a   Danilchenko, B A ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BIOSENSOR APPLICATIONS; CHEMICAL WET ETCHING; HIGH CARRIER MOBILITY; PERFORMANCE AND SCALABILITIES; RADIATION TREATMENTS; SI NANOWIRE FIELD EFFECT TRANSISTORS; STABILITY AND RELIABILITIES; TRANSPORT CHARACTERISTICS;

FIELD EFFECT TRANSISTORS; NANOWIRES; SCALABILITY; SILICON; TRANSPORT PROPERTIES;

GAMMA RAYS;

EID: 84888598505     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4833567     Document Type: Article

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