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Applied Physics A: Materials Science and Processing

Volumn 113, Issue 2, 2013, Pages 285-290

Activation of Al2O3 passivation layers on silicon by microwave annealing

(4) Ziegler, Johannes a Otto, Martin a Sprafke, Alexander N a Wehrspohn, Ralf B b

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE ANNEALING; MICROWAVE SOURCES; MINORITY CARRIER LIFETIMES; MODERATE TEMPERATURE; PASSIVATION LAYER; POST DEPOSITION ANNEALING; RECOMBINATION LOSS; SILICON SURFACES;

ANNEALING; ATOMIC LAYER DEPOSITION; DEPOSITION; NITROGEN; OVENS; PASSIVATION; SILICON;

SILICON WAFERS;

EID: 84900668170 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-013-7943-5 Document Type: Article

Times cited : (4)

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