Stretched-exponential a-Si:Hc-Si interface recombination decay

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  De Wolf, Stefaan ^a   Olibet, Sara ^a   Ballif, Christophe ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HYDROGEN; NONMETALS; PASSIVATION; SILICON;

AMERICAN INSTITUTE OF PHYSICS (AIP); BULK MATERIALS; CARRIER INJECTIONS; CRYSTALLINE SILICONS; ELECTRONIC PASSIVATION; EXPONENTIALS; FIELD EFFECTS; HYDROGEN DIFFUSION; HYDROGEN MOTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTERFACE RECOMBINATION; INTERFACE STATES; RETRAPPING; SI DANGLING BONDS;

AMORPHOUS SILICON;

EID: 48249150015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2956668     Document Type: Article

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