Recent breakthroughs in carrier depletion based silicon optical modulators

Nanophotonics

Volumn 3, Issue 4-5, 2014, Pages 229-245

  Reed, Graham T ^a   Mashanovich, Goran Z ^a   Gardes, Frederic Y ^a   Nedeljkovic, Milos ^a   Hu, Youfang ^a   Thomson, David J ^a   Li, Ke ^a   Wilson, Peter R ^a   Chen, Sheng Wen ^b   Hsu, Shawn S ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Depletion; modulators; Silicon photonics

Indexed keywords

MODULATORS; PHOTONICS; SILICON;

CARRIER DEPLETION; DEPLETION; MID-INFRARED WAVELENGTH RANGES; PLASMA DISPERSION EFFECTS; RESEARCH TRENDS; SILICON PHOTONICS; SILICON RIB WAVEGUIDES; SILICON-BASED;

LIGHT MODULATORS;

EID: 84921391828     PISSN: None     EISSN: 21928614     Source Type: Journal    
DOI: 10.1515/nanoph-2013-0016     Document Type: Review

References (82)

1. Tang Y, Peters JD, Bowers JE. Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 ìm transmission. Opt Express 2012;20:11529-535.
2. Edwards EH, Lever L, Fei ET, Kamins TI, Ikonic Z, Harris JS, Kelsall RW, Miller DAB. Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon. Opt Express 2013;21:867-76.
3. Chaisakul P, Marris-Morini D, Rouifed M-S, Isella G, Chrastina D, Frigerio J, Le Roux X, Edmond S, Coudevylle J-R, Vivien L. Ge/ SiGe multiple quantum well electro-absorption modulator. Opt Express 2012;20:3219-24.
4. Lever L, Hu Y, Myronov M, Liu X, Owens N, Gardes FY, Marko IP, Sweeney SJ, Ikonic Z, Leadley DR, Reed GT, Kelsall RW. Modulation of the absorption coefficient at 1.3 um in Ge/SiGe multiple quantum well heterostructures on silicon. Opt Lett 2011;36:4158-60.
5. Feng D, Liao S, Liang H, Fong J, Bijlani B, Shafiiha R, Luff BJ, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M. High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide. Opt Express 2012;20:22224-32.
6. Ya-Ming L, Wei-Xuan H, Bu-Wen C, Zhi L, Qi-Ming W. Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes. Chin Phys Lett 2012;29:034205-1-034205-3.
7. Alloatti L, Korn D, Palmer R, Hillerkuss D, Li J, Barklund A, Dinu R, Wieland J, Fournier M, Fedeli J, Yu H, Bogaerts W, Dumon P, Baets R, Koos C, Freude W, Leuthold J. 42.7 Gbit/s electro-optic modulator in silicon technology. Opt Express 2011;19:11841-51.
8. Gould M, Baehr-Jones T, Ding R, Huang S, Luo J, Jen AK-Y, Fedeli J-M, Fournier M, Hochberg M. Silicon-polymer hybrid slot waveguide ring-resonator modulator. Opt Express 2011;19:3952-61.
9. Liu M, Yin X, Ulin-Avila E, Geng B, Zentgraf T, Ju L, Wang F, Zhang X. A graphene-based broadband optical modulator. Nature 2011;474:64-7.
10. Liu M, Yin X, Zhang X. Double-layer graphene optical modulator. Nano Lett 2012;12:1482-5.
11. Lu Z, Zhao W. Nanoscale electro-optic modulators based on graphene-slot waveguides. JOSA B 2012;29: 1490-1496.
12. Xu C, Jin Y, Yang L, Yang J, Jiang X. Characteristics of electrorefractive modulating based on graphene-oxide-silicon waveguide. Opt Express 2012;20:22398-405.
13. Gan X, Shiue R-J, Gao Y, Mak KF, Yao X, Li L, Szep A, Walker D Jr, Hone J, Heinz TF, Englund D. High-contrast electrooptic modulation of a photonic crystal nanocavity by electrical gating of graphene. Nano Lett 2013;13:691-6.
14. Melikyan A, Lindenmann N, Walheim S, Leufke PM, Ulrich S, Ye J, Vincze P, Hahn H, Schimmel Th, Koos C, Freude W, Leuthold J. Surface plasmon polariton absorption modulator. Opt Express 2011;19:8855-69.
15. Sun X, Zhou L, Li X, Hong Z, Chen J. Design and analysis of a phase modulator based on a metal-polymer-silicon hybrid plasmonic waveguide. Appl Opt 2011;50:3428-34.
16. Sorger VJ, Lanzillotti-Kimura ND, Ma R-M, Zhang X. Ultracompact silicon nanophotonic modulator with broadband response. Nanophotonics 2012;1:17-22.
17. Thomas R, Ikonic Z, Kelsall RW. Electro-optic metal insulator semiconductor insulator metal Mach-Zehnder plasmonic modulator. Phot Nano Fund Appl 2012;10:183-9.
18. Gardes F, Reed G, Emerson N, Png C. A sub-micron depletiontype photonic modulator in silicon on insulator. Opt Express 2005;13:8845-54.
19. Liu A, Liao L, Rubin D, Nguyen H, Ciftcioglu B, Chetrit Y, Izhaky N, Paniccia M. High-speed optical modulation based on carrier depletion in a silicon waveguide. Opt Express 2007;15:660-668.
20. Liao L, Liu A, Rubin D, Basak J, Chetrit Y, Nguyen H, Cohen R, Izhaky N, Paniccia M. 40 Gbit/s silicon optical modulator for highspeed applications. Electron Lett 2007;43:1196-1197.
21. Spector SJ, Geis MW, Grein ME, Schulein RT, Yoon JU, Lennon DM, Gan F, Zhou G-R, Kaertner FX, Lyszczarz TM. High-speed silicon electro-optical modulator that can be operated in carrier depletion or carrier injection mode. Conference on Lasers and Electro-Optics (CLEO), San Jose, USA, 2008.
22. Marris-Morini D, Vivien L, Fédéli J-M, Cassan E, Lyan P, Laval S. Low loss and high speed silicon optical modulation based on a lateral carrier depletion structure. Opt Express 2008;16:334-9.
23. You J-B, Park M, Park J-W, Kim G. 12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode. Opt Express 2008;16:18340-4.
24. Li G, Zheng X, Thacker H, Yao J, Loo Y, Shubin I, Raj K, Cunningham JE, Krishnamoorthy AV. 40Gb/s Thermally Tunable CMOS ring Modulator. Proceedings of Group IV photonics, San Diego, USA, 2012.
25. Dong P, Chen L, Chen Y-K. High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators. Opt Express 2012;20:6163-9.
26. Baehr-Jones T, Ding R, Liu Y, Ayazi A, Pinguet T, Harris NC, Streshinsky M, Lee P, Zhang Y, Lim AE-J, Liow T-Y, Teo SH-G, Lo GQ, Hochberg M. Ultralow drive voltage silicon travelingwave modulator. Opt Express 2012;20:12014-20.
27. Korn D, Hui Y, Hillerkuss D, Alloatti L, Mattern C, Komorowska K, Bogaerts W, Baets R, Van Campenhout J, Verheyen P, Wouters J, Moelants M, Absil P, Koos C, Freude W, Leuthold J. Detection or modulation at 35 Gbit/s with a Standard CMOS-processed Optical Waveguide. Proceedings of Conference on Lasers and Electro-Optics (CLEO), San Jose, USA, 2012.
28. Yu H, Bogaerts W, Komorowska K, Van Campenhout J, Verheyen P, Absil PP, Baets R. 12.5 Gbits/s carrier-depletion based silicon Mach-Zehnder modulation with a 2 V driven voltage. Proceedings of the 2011 annual symposium of the IEEE Photonics Benelux Chapter, 2011, p.93-96.
29. Kim G, Woo Park J, Kim IG, Kim S, Kim S, Lee JM, Park GS, Joo J, Jang K-S, Oh JH, Kim SA, Kim JH, Lee JY, Park JM, Kim D-W, Jeong D-K, Hwang M-S, Kim J-K, Park K-S, Chi H-K, Kim H-C, Kim D-W, Cho MH. Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s. Opt Express 2011;19:26936-47.
30. Li X, Xiao X, Xu H, Li Z, Chu T, Yu J, Yu Y. Highly efficient silicon Michelson interferometer modulators. IEEE Photon Technol Lett 2013;25:407-9.
31. Yu H, Pantouvaki M, Van Campenhout J, Korn D, Komorowska K, Dumon P, Li Y, Verheyen P, Absil P, Alloatti L, Hillerkuss D, Leuthold J, Baets R, Bogaerts W. Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier depletion based silicon modulators. Opt Express 2012;20:12926-38.
32. Ding J, Chen H, Yang L, Zhang L, Ji R, Tian Y, Zhu W, Lu Y, Zhou P, Ming R, Yu M. Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator. Opt Express 2012;20:7081-7.
33. Xiao X, Xu H, Li X, Li Z, Chu T, Yu Y, Yu J. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization. Opt Express 2013;21:4116-25.
34. Yi H, Long Q, Tan W, Li L, Wang X, Zhou Z. Demonstration of low power penalty of silicon Mach-Zehnder modulator in long haul transmission. Opt Express 2012;20:27562-8.
35. Tu X, Liow T, Song J, Luo X, Fang Q, Yu M, Lo G. 50-Gb/s silicon optical modulator with traveling-wave electrodes. Opt Express 2013;21:12776-82.
36. Gardes FY, Brimont A, Sanchis P, Rasigade G, Marris-Morini D, O'Faolain L, Dong F, Fedeli J-M, Dumon P, Vivien L, Krauss TF, Reed GT, Mart Jí. High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode. Opt Express 2009;17:21986-91.
37. Thomson DJ, Gardes FY, Reed GT, Milesi F, Fedeli J-M. High speed silicon optical modulator with self aligned fabrication process. Opt Express 2010;18:19064-9.
38. Gardes FY, Thomson DJ, Emerson NG, Reed GT. 40 Gb/s silicon photonics modulator for TE and TM polarisations. Opt Express 2011;19:11804-14.
39. Thomson DJ, Gardes FY, Liu S, Porte H, Zimmermann L, Fedeli J-M, Hu Y, Nedeljkovic M, Yang X, Petropoulos P, Mashanovich GZ. High performance mach zehnder based silicon optical modulators. IEEE J Sel Top Quant 2013;19.
40. Thomson DJ, Gardes FY, Hu Y, Mashanovich G, Fournier M, Grosse P, Fedeli J-M, Reed GT. High contrast 40Gbit/s optical modulation in silicon. Opt Express 2011;19:11507-16.
41. Thomson DJ, Gardes FY, Fedeli J-M, Zlatanovic S, Hu Y, Kuo BP-P, Myslivets E, Alic N, Radic S, Mashanovich GZ, Reed GT. 50Gb/s silicon optical modulator. IEEE Photonic Tech L 2012;24:234-6.
42. Liow T-Y, Song J, Tu X, Lim AE-J, Fang Q, Duan N, Yu M, Lo G-Q. Silicon optical interconnect device technologies for 40Gb/s and beyond. IEEE J Sel Top Quant 2013;19.
43. Ziebell M, Marris-Morini D, Rasigade G, Fédéli J-M, Crozat P, Cassan E, Bouville D, Vivien L. 40 Gbit/s low-loss silicon optical modulator based on a pipin diode. Opt Express 2012;20:10591-6.
44. Li Z-Y, Xu D-X, McKinnon RW, Janz S, Schmid JH, Cheben P, Yu J-Z. Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions. Opt Express 2009;17:15947-58.
45. Xu H, Xiao X, Li X, Hu Y, Li Z, Chu T, Yu Y, Yu J. High speed silicon Mach-Zehnder modulator based on interleaved PN junctions. Opt Express 2012;20:15093-9.
46. Xiao X, Xu H, Li X, Hu Y, Xiong K, Li Z, Chu T, Yu Y, Yu J. 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions. Opt Express 2012;30:2507-15.
47. Ziebell M, Marris-Morini D, Rasigade G, Crozat P, Fedeli J-M, Grosse P, Cassan E, Vivien L. Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions. Opt Express 2011;19:14690-5.
48. Xiao X, Li X, Hu Y, Xiong K, Li Z, Chu T, Yu J, Yu Y. 44-Gb/s silicon microring modulators based on zigzag PN junctions. IEEE Photonic Tech L 2012;24:1712-4.
49. Spector SJ, Sorace CM, Geis MW, Geis ME, Grein ME, Yoon JU, Lyszczarz TM, Ippen EP, Kartner FX. Operation of silicon-diode-based optical modulators. IEEE J Sel Top Quant 2010;16:165-72.
50. Rosenberg JC, Green WMJ, Assefa S, Gill DM, Barwicz T, Yang M, Shank SM, Vlasov YA. A 25Gbps silicon microring modulator based on an interleaved junction. Opt Express 2012;20: 26411-23.
51. Zortmann WA, Lentine AL, Trotter DC, Watts MR. Low-voltage differentially-signaled modulators. Opt Express 2011;19:26017-26.
52. Pepeljugoski P, Kash J, Doany F, Kuchta D, Schares L, Schow C, Taubenblatt M, Offrein BJ, Benner A. Low power and high density optical interconnects for future supercomputers. Proceedings of Optical Fiber Communication Conference, OThX2, San Diego, USA, 2010.
53. Krishnamoorthy AV, Ho R, O'Krafka B, Cunningham JE, Lexau J, Zheng X. Potentials of group IV photonics interconnects for "red-shift" computing applications. Proceedings of IEEE Group IV Photonics 2007.
54. Barwicz T, Byun H, Gan F, Holzwarth CW, Popovic MA, Rakich PT, Watts MR, Ippen EP, Kärtner FX, Smith HI, Orcutt JS, Ram RJ, Stojanovic V, Olubuyide OO, Hoyt JL, Spector S, Geis M, Grein M, Lyszczarz T, Yoon JU. Silicon photonics for compact, energyefficient interconnects. J Opt Networking 2007;6:63-73.
55. Yoo SJB. Future prospects of silicon photonics in next generation communication and computing systems. Electron Lett 2009;45:584-8.
56. Debnath K, O'Faolain L, Gardes FY, Steffan AG, Reed GT, Krauss TF. Cascaded modulator architecture for WDM applications. Opt Express 2012;20:27420-8.
57. Guha B, Gondarenko A, Lipson M. Minimizing temperature sensitivity of silicon Mach-Zehnder interferometers. Opt Express 2010;18:1879-87.
58. Milosevic MM, Emerson NG, Gardes FY, Chen X, Adikaari AADT, Mashanovich GZ. Athermal waveguides for optical communication wavelengths. Opt Lett 2011;36:4659-61.
59. Brimont A, Thomson DJ, Sanchis P, Herrera J, Gardes FY, Fedeli JM, Reed GT, Marti J. High speed silicon electro-optical modulators enhanced via slow light propagation. Opt Express 2011;19:20876-85.
60. Soref RA, Bennett BR. Electrooptical effects in silicon. IEEE J Quant Elect 1987;23:123-9.
61. Ding J, Chen H, Yang L, Zhang L, Ji R, Tian Y, Zhu W, Lu Y, Zhou P, Min R. Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration. Opt Express 2012;20:3209-18.
62. Goi K, Oda K, Kusaka H, Terada Y, Ogawa K, Liow T-Y, Tu X, Lo G-Q, Kwong D-L. 11-Gb/s 80-km transmission performance of zero-chirp silicon Mach-Zehnder modulator. Opt Express 2012;20:B350-6.
63. Chen L, Dong P, Chen Y-K. Chirp and dispersion tolerance of a single-drive push-pull silicon modulator at 28Gb/s. IEEE Photonic Tech L 2012;24:936-8.
64. Wei Y, Zhao Y, Yang J, Wang M, Jiang X. Chirp characteristics of silicon Mach-Zehnder modulator under small-signal modulation. IEEE J Lightwave Technol 2011;29:1011-7.
65. Aamera M, Thomson DJ, Gutiérrez AM, Brimont A, Gardes FY, Reed GT, Fedeli JM, Hakansson A, Sanchis P. 10 Gbit/s error-free DPSK modulation using a push-pull dual-drive silicon modulator. Opt Commun 2013;304:107-10.
66. Goi K, Kusaka H, Oka A, Terada Y, Ogawa K, Liow T-Y, Tu X, Lo G, Kwong D-L. DQPSK/QPSK modulation at 40-60 Gb/s using low-loss nested silicon Mach-Zehnder modulator. Proceedings of OFC, OW4J.4, Anaheim, USA, 2013.
67. Dong P, Xie C, Chen L, Buhl LL, Chen Y-K. 12-Gb/s Monolithic PDM-QPSK Modulator in Silicon. Proceedings of ECOC, Postdeadline Session II (Th.3.B), Amsterdam,The Netherlands, 2012.
68. Wu X, Dama B, Gothoskar P, Metz P, Shastri K, Sunder S, Van der Spiegel J, Wang Y, Webster M, Wilson W. A 20Gb/s NRZ/ PAM-4 1V transmitter in 40nm CMOS driving a Ai-photonic modulator in 0.13um CMOS. Proceedings of ISSCC, Session 7, 7.7, San Francisco, USA, 2013.
69. Soref R. Mid-infrared photonics in silicon and germanium. Nat Photon 2010;4:495-497.
70. Nedeljkovic M, Soref R, Mashanovich GZ. Free-carrier electrorefraction and electro-absorption modulation predictions for silicon over the 1-14 um wavelength range. IEEE J Photon 2011;3:1171-80.
71. Van Camp MA, Assefa S, Gill DM, Barwicz T, Rice PM, Topuria T, Green WM. Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer. Opt Express 2012;20:28009-16.
72. Nguyen HC, Hashimoto S, Shinkawa M, Baba T. Sub-100mm, 40Gb/s photonics crystal silicon optical modulators. Proceedings of IEEE Group IV Photonics, San Diego, USA, 2012.
73. Thomson DJ, Gardes FY, Cox DC, Fedeli J-M, Mashanovich GZ, Reed GT. Self-aligned silicon ring resonator optical modulator with focused ion beam error correction. J Opt Soc Am B 2013;30:445-9.
74. Hu Y, Xiao X, Xu H, Li X, Xiong K, Li Z, Chu T, Yu Y, Yu J. High-speed silicon modulator based on cascaded microring resonators. Opt Express 2012;20:15079-85.
75. Milosevic MM, Gardes FY, Thomson DJ, Mashanovich GZ. Temperature insensitive racetrack resonators for optical communication applications. OFC 2012, Los Angeles, USA, 4-8 March 2012.
76. Georgas M, Leu J, Moss B, Sun C, Stojanovic V. Addressing link-level design tradeoffs for integrated photonic interconnects. IEEE Custom Integrated Circuits Conference (CICC), 2011, pp. 1-8.
77. Masood A, Pantouvake M, Lepage G, Verheyen P, Van Campenhout J, Absil P, Van Thourhout D, Bogaerts W. Comparison of heater architectures for thermal control of silicon photonic circuits. Proceedings of IEEE Group IV Photonics, Seoul, South Korea, 2013.
78. Shubin I, Zheng X, Li G, Thacker H, Yao J, Guenin B, Pinguet T, Mekis A, Krishnamoorthy AV, Cunningham JE. Low power thermal tuning of SOI-CMOS photonic sturctures. Proceedings of SPIE Photonics West, San Francisco, USA, 2011.
79. Reed GT, Knights AP. Silicon Photonics: An Introduction, Wiley: Chichester, UK, 2004.
80. Li K, Wilson P, "An improved push-pull driver using 0.13ìm CMOS" In: 2013 IEEE International Symposium on Circuits and Systems, ISCAS, Beijing, China, 2013.
81. Hsu SH, et al. CMOS broadband amplifiers for optical communications and optical interconnects. IEEE Symposium of RF Integration Technology, Baltimore, USA, 2011.
82. Jatar S, Malinge Y, Zhou Z, Liang H, Lioa S, Li Z, Bushyakanist C, Lee DC, Shafiiha R, Luff J, Feng D, Asghari M. Performance of parallel 4x25 Gbs transmitter and receiver fabricated on SOI platform. Proceedings of IEEE Group IV Photonics, San Diego, USA, 2012.