Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s

Optics Express

Volumn 19, Issue 27, 2011, Pages 26936-26947

  Kim, Gyungock ^a   Park, Jeong Woo ^a   Kim, In Gyoo ^a   Kim, Sanghoon ^a   Kim, Sanggi ^a   Lee, Jong Moo ^a   Park, Gun Sik ^a   Joo, Jiho ^a   Jang, Ki Seok ^a   Oh, Jin Hyuk ^a   Kim, Sun Ae ^a   Kim, Jong Hoon ^a   Lee, Jun Young ^a   Park, Jong Moon ^a   Kim, Do Won ^a   Jeong, Deog Kyoon ^b   Hwang, Moon Sang ^b   Kim, Jeong Kyoum ^b   Park, Kyu Sang ^b   Chi, Han Kyu ^b   Kim, Hyun Chang ^b   Kim, Dong Wook ^b   Cho, Mu Hee ^c   more..

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Seoul National University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COUPLED CIRCUITS; FIBER OPTIC NETWORKS; GERMANIUM; INFRARED DETECTORS; INTEGRATION; LIGHT MODULATORS; LIGHT TRANSMISSION; OPTICAL INTERCONNECTS; PHOTONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; WAVEGUIDES;

20 GB/S; CMOS COMPATIBLE; CMOS INTERFACE IC; DIFFERENTIAL DRIVE; EXTINCTION RATIOS; GE-ON-SI PHOTODETECTORS; HYBRID SILICON; INTEGRATION PROCESS; LOW-VOLTAGE; MACH ZEHNDER MODULATOR; MODULATION EFFICIENCY; MONOLITHICALLY INTEGRATED; OFF-CHIP; ON CHIPS; PHOTONIC INTEGRATED CIRCUITS; PHOTONIC INTERCONNECTS; POTENTIAL APPLICATIONS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON PHOTONIC DEVICES; SILICON PHOTONICS; SILICON WAVEGUIDE; SOI WAFERS;

PHOTONIC INTEGRATION TECHNOLOGY;

SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MICROWAVE RADIATION; OPTICAL INSTRUMENTATION; PHOTOMETRY; PHOTON; SEMICONDUCTOR; SIGNAL PROCESSING; SYSTEM ANALYSIS; TELECOMMUNICATION;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICROWAVES; OPTICAL DEVICES; PHOTOMETRY; PHOTONS; SEMICONDUCTORS; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON; SYSTEMS INTEGRATION; TELECOMMUNICATIONS;

EID: 84555223638     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.026936     Document Type: Article

References (36)

1. M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, "On-chip optical interconnect roadmap: challenges and critical directions," IEEE J. Sel. Top. Quantum Electron. 12(6), 1699-1705 (2006).
2. C. Gunn, "CMOS photonics for high-speed interconnects," IEEE. Micro. 26(2), 58-66 (2006).
3. A. Shacham, K. Bergman, and L. P. Carloni, "Photonic networks-on-chip for future generations of chip multiprocessors," IEEE Trans. Comput. 57(9), 1246-1260 (2008).
4. D. Miller, "Device requirements for optical interconnects to silicon chips," Proc. IEEE 97(7), 1166-1185 (2009).
5. K. Preston, L. Chen, S. Manipatruni, and M. Lipson, "Silicon photonic interconnect with micrometer-scale devices," 6th International Conference on Group IV Photonics, WA2, 1-3 (2009).
6. A. Narasimha, S. Abdaila, C. Bradbury, A. Clark, J. Clymore, J. Coyne, A. Dahl, S. Gloeckner, A. Gruenberg, D. Guckenberger, S. Gutierrez, M. Harrison, D. Kucharski, K. Leap, R. LeBlanc, V. Liang, M. Mack, D. Martinez, G. Masini, A. Mekis, R. Menigoz, C. Ogden, M. Peterson, T. Pinguet, J. Redman, J. Rodriguez, S. Sahni, M. Sharp, T. Sleboda, D. Song, V. Wang, B. Welch, J. Witzens, W. Xu, K. Vokoyama, and P. DobbeIaere, "An ultra low power CMOS photonics technology platform for H/S optoelectronic transceivers at less than $1 per Gbps," in Proc. OFC 2010, San Diego, USA (2010).
7. R. Soref and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23(1), 123-129 (1987).
8. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, M. Paniccia, N. Izhaky, and M. Paniccia, "40Gbit/s silicon optical modulator high-speed applications," Electron. Lett. 43(22), 1196-1197 (2007). (Pubitemid 47631710)
9. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15(2), 660-668 (2007). (Pubitemid 46168516)
10. W. M. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, "Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator," Opt. Express 15(25), 17106-17113 (2007). (Pubitemid 350260570)
11. J. W. Park, J.-B. You, I. G. Kim, and G. Kim, "High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode," Opt. Express 17(18), 15520-15524 (2009).
12. J.-B. You, M. Park, J.-W. Park, and G. Kim, "12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode," Opt. Express 16(22), 18340-18344 (2008).
13. P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, "Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator," Opt. Express 17(25), 22484-22490 (2009).
14. N. N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, "High speed carrier-depletion modulators with 1.4V-cm V(π)L integrated on 0.25microm silicon-on-insulator waveguides," Opt. Express 18(8), 7994-7999 (2010).
15. F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, "40 Gb/s silicon photonics modulator for TE and TM polarizations," Opt. Express 19(12), 11804-11814 (2011).
16. D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, "High contrast 40Gbit/s optical modulation in silicon," Opt. Express 19(12), 11507-11516 (2011).
17. G. Rasigade, M. Ziebell, D. Marris-Morini, J.-M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, "High extinction ratio 10 Gbit/s silicon optical modulator," Opt. Express 19(7), 5827-5832 (2011).
18. M. Watts, W. Zortman, D. Trotter, R. Young, and A. Lentine, "Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator," IEEE J. Sel. Top. Quantum Electron. 16(1), 159-164 (2010).
19. D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, "High performance, waveguide integrated Ge photodetectors," Opt. Express 15(7), 3916-3921 (2007). (Pubitemid 46557553)
20. L. Vivien, J. Osmond, J. M. Fédéli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, "42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide," Opt. Express 17(8), 6252-6257 (2009).
21. D. Feng, S. Liao, P. Dong, N. Feng, H. Liang, D. Zheng, C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, "High-speed Ge photodetector monolithically integrated with large crosssection silicon-on-insulator waveguide," Appl. Phys. Lett. 95(26), 261105 (2009).
22. H. Yu S. Ren, W. Jung, A. Okyay, D. Miller, and K. Saraswat, "High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration," IEEE Electron Device Lett. 30(11), 1161-1163 (2009).
23. S. Assefa, F. Xia, and Y. A. Vlasov, "Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects," Nature 464(7285), 80-84 (2010).
24. S. Liao, N. N. Feng, D. Feng, P. Dong, R. Shafiiha, C. C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, "36 GHz submicron silicon waveguide germanium photodetector," Opt. Express 19(11), 10967-10972 (2011).
25. M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, "Performance of Ge/Si receivers at 1310 nm," Physica E 41(6), 1076-1081 (2009).
26. Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product," Nature Photon. 3, 59-63 (2009).
27. M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett. 17(7), 1510-1512 (2005). (Pubitemid 41158442)
28. D. Suh, S. Kim, J. Joo, and G. Kim, "36-GHz high-responsivity Ge photodetectors grown by RPCVD," IEEE Photon. Technol. Lett. 21(10), 672-674 (2009).
29. J. Joo, S. Kim, I. Kim, K. Jang, and G. Kim, "High- sensitivity 10 Gbps Ge-on- Si photoreceiver operating at λ ∼ 1.55 μm ," Opt. Express 18, 16474-16479 (2010).
30. J. Joo, S. Kim, I. Kim, K. Jang, and G. Kim, "Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 μm," in Proc. OFC 2011, Los Angeles, USA (2011).
31. T. Pinguet, B. Analui, E. Balmater, D. Guckenberger, M. Harrison, R. Koumans, D. Kucharski, Y. Liang, G. Masini, A. Mekis, S. Mirsaidi, A. Narasimha, M. Peterson, D. Rines, V. Sadagopan, S. Sahni, T. J. Sleboda, D. Song, Y. Wang, B. Welch, J. Witzens, J. Yao, S. Abdalla, S. Gloeckner, P. De Dobbelaere, and G. Capellini, "Monolithically Integrated High-Speed CMOS Photonic Transceivers," in Proc. IEEE Int. Conf. Group IV Photonics, 362-364 (2008).
32. X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, "A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems," Opt. Express 18(1), 204-211 (2010).
33. T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, "Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization," IEEE Sel. Top. Quantum Electron. 16(1), 307-315 (2010).
34. M. Rasras, D. Gill, M. Earnshaw, C. Doerr, J. Weiner, C. Bolle, and Y. Chen, "CMOS silicon receiver integrated with Ge detector and reconfigurable optical filter," IEEE Photon. Technol. Lett. 22(2), 112-114 (2010).
35. X. Zheng, D. Patil, J. Lexau, F. Liu, G. Li, H. Thacker, Y. Luo, I. Shubin, J. Li, J. Yao, P. Dong, D. Feng, M. Asghari, T. Pinguet, A. Mekis, P. Amberg, M. Dayringer, J. Gainsley, H. F. Moghadam, E. Alon, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, "Ultra-efficient 10 Gb/s hybrid integrated silicon photonic transmitter and receiver," Opt. Express 19(6), 5172-5186 (2011).
36. K. Park, B. Yoo, M. Hwang, H. Chi, H. Kim, J. Park, G. Kim, and D. Jeong, "A 10-Gb/s optical receiver frontend with 5-mW transimpedance amplifier," IEEE Asian Solid-State Circuits Conference, Beijing, 3-5 (2010).