High-speed optical modulation based on carrier depletion in a silicon waveguide

Optics Express

Volumn 15, Issue 2, 2007, Pages 660-668

  Liu, Ansheng ^a   Liao, Ling ^a   Rubin, Doron ^b   Nguyen, Hat ^a   Ciftcioglu, Berkehan ^a   Chetrit, Yoel ^b   Izhaky, Nahum ^b   Paniccia, Mario ^a  

^a INTEL CORPORATION   (United States)

^b INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC FIELDS; FREQUENCY MODULATION; OPTICAL WAVEGUIDES; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

CARRIER DEPLETION; DATA TRANSMISSION; SILICON WAVEGUIDE; TRAVELLING WAVE DESIGNS;

LIGHT MODULATION;

EID: 33846490676     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.000660     Document Type: Article

References (34)

1. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, M. Paniccia, "A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor," Nature 427, 615-618 (2004).
2. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, H. Hodge, D. Rubin, U. D. Keil, T. Franck, "High-speed silicon Mach-Zehnder modulator," Opt. Express 13, 3129-3135 (2005).
3. A. Huang, G. Gunn, G.-L. Li, Y. Liang, S. Mirsaidi, A. Narasimha, T. Pinguet, "A 10 Gb/s photonic modulator and WDM MUX/DEMUX integrated with electronics in 0.13 μm SOI CMOS," in Technical Digest of 2006 IEEE International Solid-State Circuits Conference, Session 13/ Optical Communication/13.7.
4. nd IEEE International Conference on Group IV Photonics, pp. 171-173.
5. M. Oehme, J. Werner, E. Kasper, M. Jutzi, M. Berroth, "High bandwidth Ge p-i-n photodetector integrated on Si," Appl. Phys. Lett. 89, 071117-071117-3 (2006).
6. O. Boyraz, B. Jalali, "Demonstration of a silicon Raman laser," Opt. Express 12, 5269-5273 (2004).
7. H. Rong, et. al. "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
8. A. Liu, H. Rong, M. Paniccia, O. Cohen, D. Hak, "Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering," Opt. Express 12, 4261-4268 (2004).
9. O. Boyraz, B. Jalali, "Demonstration of 11 dB fiber-to-fiber gain in a silicon Raman amplifier," Electron. Express 1, 429-434 (2004).
10. Q. Xu, V. R. Almeida, M. Lipson, "Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide," Opt. Lett. 30, 35-37 (2005).
11. R. Jones, et. al. "Net continuous-wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering," Opt. Express 13, 519-525 (2005).
12. R. L. Espinola, J. I. Dadap, R. M. Osgood, Jr., S. J. McNab, Y. A. Vlasov, "C-band wavelength conversion in silicon photonic wire waveguides," Opt. Express 13, 4341-4349 (2005).
13. K. Yamada, et. al. "All-optical efficient wavelength conversion using silicon photonic wire waveguide," IEEE Photon. Technol. Lett. 18, 1046-1048 (2006).
14. H. Rong, Y. H. Kuo, A. Liu, M. Paniccia, O. Cohen, "High efficiency wavelength conversion of 10 Gb/s data in silicon waveguides," Opt. Express 14, 1182-1188 (2006).
15. A. W. Fang, H. Park, O. Cohen, R. Jones, M. Paniccia, J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210 (2006).
16. 3 optical modulators," J. Lightwave Technol. 16, 615-619 (1998).
17. K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, T. Ito, R. Iga, Y. Kondo, Y. Tohmori, "A 40-Gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder modulator with a drive voltage of 2.3 V," IEEE Photon. Technol. Lett. 17, 46-48 (2005).
18. R. A. Soref, P. J. Lorenzo, "All-silicon active and passive guided-wave components for λ=1.3 and 1.6 μm," IEEE J. Quantum Electron. QE-22, 873-879 (1986).
19. R. A. Soref, B. R. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. QE-23, 123-129 (1987).
20. R. S. Jacobsen, et al. "Strained silicon as a new electro-optic material," Nature 441, 199-202 (2006).
21. Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, J. S. Harris, "Strong quantum-confined Stark effect in germanium quantum-well structures on silicon," Nature 437, 1334-1336 (2005).
22. C. K. Tang, G. T. Reed, "Highly efficient optical phase modulator in SOI waveguides," Electron. Lett. 31, 451-452 (1995).
23. F. Y. Gardes, G. T. Reed, N. G. Emerson, C. E. Png, "A sub-micron depletion-type photonic modulator in Silicon on Insulator," Optics Express 13, 8845-8853 (2006).
24. Q. Xu, B. Schmidt, S. Pradhan, M. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
25. F. Gan, F. X. Kartner, "High-speed silicon electrooptic modulator design," IEEE Photon. Technol. Lett. 17, 1007-1009 (2005).
26. A. Alping, X. S. Wu, T. R. Hausken, and L. A. Coldren, "Highly efficient waveguide phase modulator for integrated optoelectronics," Appl. Phys. Lett. 48, 243-245 (1986).
27. J. G. Mendoza-Alvarez, L. A. Coldren, A. Alping, R. H. Yan, T. Hausken, K. Lee, and K. Pedrotti, "Analysis of depletion edge translation lightwave modulators," IEEE J. Lightwave Technol. 6, 793-807 (1988).
28. R. C. Alferness, "Waveguide electrooptic modulators," IEEE Trans. Microwave Theory Tech. 30, 1121-1137 (1982).
29. R. G. Walker, "High-speed III-V semiconductor intensity modulators," IEEE J. Quantum Electron. 27, 654-667 (1991).
30. S. L. Chuang, Physics of Optoelectronics Devices. (John Wiley, New York, 1995).
31. G. T. Reed, A. P. Knights, Silicon Photonics: an introduction (John Wiley, Chichester, 2004).
32. pp single-drive push-pull InP Mach-Zehnder modulator module for 43-Gbit/s systems," in Technical Digest of 2006 Optical Fiber Communication Conference and National Fiber Optic Engineers Conference 5-10 March 2006, p.3.
33. Y. Cui and P. Berini, "Modeling and design of GaAs traveling-wave electrooptic modulators based on capacitively loaded coplanar strips," IEEE J. Lightwave Technol. 24, 544-554 (2006).
34. S. Pae, T. Su, J. P. Denton, G. W. Neudeck, "Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth," IEEE Electron Device Lett. 20, 194-196 (1999).