Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators

Optics Express

Volumn 20, Issue 12, 2012, Pages 12926-12938

  Yu, Hui ^a   Pantouvaki, Marianna ^b   Van Campenhout, Joris ^b   Korn, Dietmar ^c   Komorowska, Katarzyna ^a   Dumon, Pieter ^a   Li, Yanlu ^a   Verheyen, Peter ^b   Absil, Philippe ^b   Alloatti, Luca ^c   Hillerkuss, David ^c   Leuthold, Juerg ^c   Baets, Roel ^a   Bogaerts, Wim ^a  

^a GHENT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL CONSTANTS; OPTICS;

10-GBIT/S; 40-GBIT/S; FABRICATION PLATFORM; P-N JUNCTION; PERFORMANCE TRADE-OFF; PROPAGATION LOSS; SILICON MODULATORS; TRAVELING WAVE ELECTRODES;

DIODES;

EID: 84863750782     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.012926     Document Type: Article

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