Remarkable franz-keldysh effect in Ge-on-Si p-i-n diodes

Chinese Physics Letters

Volumn 29, Issue 3, 2012, Pages

  Li, Ya Ming ^a   Hu, Wei Xuan ^a   Cheng, Bu Wen ^a   Liu, Zhi ^a   Wang, Qi Ming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; EPITAXIAL TECHNOLOGIES; FRANZ-KELDYSH EFFECT; GE FILMS; GE-ON-SI; OPTICAL RESPONSIVITIES; PIN DIODE; RESPONSIVITY MEASUREMENTS; SI SUBSTRATES; WAVELENGTH RANGES;

EID: 84863238888     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/29/3/034205     Document Type: Article

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