Operation and optimization of silicon-diode-based optical modulators

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 165-172

  Spector, Steven J ^a   Sorace, Cheryl M ^b   Geis, Michael W ^a   Grein, Matthew E ^a   Yoon, Jung U ^a   Lyszczarz, Theodore M ^a   Ippen, Erich P ^b   Kärtner, Franz X ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b USA   (United States)

Author keywords

Diodes; Integrated optics; Optical communication; Optical modulation; Silicon on insulator (SOI) technology

Indexed keywords

DIODE STRUCTURE; FORWARD BIAS; MODES OF OPERATION; OPTICAL MODULATION; OPTICAL MODULATORS; REVERSE BIAS; SILICON-BASED; SILICON-ON-INSULATOR (SOI) TECHNOLOGY; STATE-OF-THE-ART PERFORMANCE;

DIODES; INTEGRATED OPTICS; LIGHT MODULATION; MICROSENSORS; OPTICAL COMMUNICATION; OPTICAL MATERIALS; PHOTONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

LIGHT MODULATORS;

EID: 76949101065     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2027817     Document Type: Article

References (26)

1. M.W. Geis, S. J. Spector, R. C.Williamson, and T.M. Lyszczarz, "Submicrosecond submilliwatt silicon-on-insulator thermooptic switch," IEEE Photon. Technol. Lett., vol.16, no.11, pp. 2514-2516, Nov. 2004.
2. R. A. Soref and B. R. Bennet, "Electrooptical effects in silicon," IEEE J. Quantum Electron., vol.QE-23, no.1, pp. 123-129, Jan. 1987.
3. R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G.Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, "Strained silicon as a newelectrooptic material," Nature, vol.551, pp. 199-202, May 2006.
4. J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, Jr., andD.A.B.Miller, "Optical modulator on silicon employing germanium quantum wells," Opt. Exp., vol.15, pp. 5851-5859, Apr. 2007.
5. J. Liu, D. Pan, S. Jongthammanurak, K. Wada, L. C. Kimerling, and J. Michel, "Design of monolithically integrated GeSi electroabsorption modulators and photodetectors on an SOI platform," Opt. Exp., vol.15, pp. 623-628, Jan. 2007.
6. Y.-H. Kuo, H.-W. Chen, and J. E. Bowers, "High speed hybrid silicon eVanescent electroabsorption modulator," Opt. Exp., vol.16, pp. 9936-9941, Jun. 2008.
7. T. Baehr-Jones, B. Penkov, J. Huang, P. SulliVan, J. Davies, J. Takayesu, J. Luo, T.-D. Kim, L. Dalton, A. Jen, M. Hochberg, and A. Scherer, "Nonlinear polymer-clad silicon slot waveguide modulator with a half wave voltage of 0.25 V," Appl. Phys. Lett., vol.92, pp. 163303-1-163303-3, Apr. 2008.
8. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, "40 Gbit/s silicon optical modulator for highspeed applications," Electron. Lett., vol.43, no.22, pp. 1196-1197, Aug. 2007. (Pubitemid 47631710)
9. D.Marris-Morini, L. Vivien, J.M. F́ed́eli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Exp., vol.16, pp. 334-339, Jan. 2008.
10. M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, "Ultralow power silicon microdisk modulators and switches," in Proc. 5th IEEE Int. Conf. Group IV Photon., 2008, pp. 4-6, Paper WA2.
11. S. J. Spector, M.W. Geis, G.-R. Zhou, M. E. Grein, F. Gan,M. A. Popovíc, J. U. Yoon, D. M. Lennon, E. P. Ippen, F. X. K̈artner, and T. M. Lyszczarz, "CMOS-compatible dual-output silicon modulator for analog signal processing," Opt. Exp., vol.16, pp. 11027-11031, Jul. 2008.
12. Q. Xu, S.Manipatruni, B. Schmidt, J. Shakya, andM. Lipson, "12.5 Gbit/s carrier-injection-based silicon microring silicon modulators," Opt. Exp., vol.15, pp. 430-436, Jan. 2007.
13. W. M. J. Green,M. J.Rooks, L. Sekaric, andY.A.Vlasov, "Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator," Opt. Exp., vol.15, pp. 17106-17113, Dec. 2007.
14. G.-R. Zhou, M.W. Geis, S. J. Spector, F. Gan, M. E. Grein, R. T. Schulein, J. S. Orcutt, J. U. Yoon, D. M. Lennon, T. M. Lyszczarz, E. P. Ippen, and F. X. K̈artner, "Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators," Opt. Exp., vol.16, pp. 5218-5226, Apr. 2008.
15. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, "High speed silicon Mach-Zehnder modulator," Opt. Exp., vol.13, pp. 3129-3135, Apr. 2005.
16. L. Gu, W. Jiang, X. Chen, and R. T. Chen, "Physical mechanism of p-i-n-diode-based photonic crystal silicon electrooptic modulators for gigahertz operation," IEEE J. Sel. Topics Quantum Electron., vol.14, no.4, pp. 1132-1139, Jul./Aug. 2008.
17. K. Solehmainen, M. Kapulainen, M. Harjanne, and T. Aalto, "Adiabatic and multimode interference couplers on silicon-on-insulator," IEEE Photon. Technol. Lett., vol.18, no.21, pp. 2287-2289, Nov. 2006.
18. J. C. Twichell and R. Helkey, "Phase-encoded optical sampling for analog-to-digital converters," IEEE Photon. Technol. Lett., vol.12, no.9, pp. 1237-1239, Sep. 2000.
19. F. X. K̈artner, R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, N. A. DiLello, F. Gan, C. W. Holzwarth, J. L. Hoyt, E. P. Ippen, A. Khilo, J. Kim,M. Kim, A.Motamedi, J. S. Orcutt, M. Park, M. Perrott, M. A. Popovíc, R. J. Ram, H. I. Smith,G.R. Zhou, S. J. Spector, T. M. Lyszczarz, M.W. Geis, D. M. Lennon, J. U. Yoon, M. E. Grein, and R. T. Schulein, "Photonic analog-to-digital conversion with electronic-photonic integrated circuits," in Proc. SPIE Photon. West, Jan. 2008, vol.6898, pp. 689806-1-689806-15.
20. T. Shoji, T. Tsuchizawa, T. Watanabe, K. Yamada, and H. Morita, "Spotsize converter for low-loss coupling between 0.3-?m-square Si wire waveguides and single-mode fibers," in Proc. IEEE/LEOS Annu. Meet. Conf. (LEOS 2002), vol.1, pp. 289-290.
21. M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band," IEEE Photon. Technol. Lett., vol.19, no.3, pp. 152-154, Feb. 2007.
22. N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith,A. P.Knights, J. H. B. Deane, F.Y. Gardes,G. Z.Mashanovich, R. Gwilliam, and G. T. Reed, "Free carrier lifetime modification for silicon waveguide based devices," Opt. Exp., vol.16, pp. 19779-19784, Nov. 2008.
23. M. R.Watts,W.A. Zortman,D. C. Trotter, R.W.Young, andA. L. Lentine, "Low voltage, compact, depletion-mode, silicon Mach-Zehnder modulator," J. Spec. Top. Quant. Electr., to be published.
24. S. P. Anderson and P. M. Fauchet, "Conformal P-N junctions for low energy electro-optic switching," presented at the CLEO/IQEC (OSA), Baltimore, MD, 2009, Paper JTuD51.
25. S. M. Sze, Physics of SemiconductorDevices, 2nd ed. NewYork:Wiley- Interscience, 1981, p. 77.
26. A. Liu, L. Liao, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, "Recent development in a high-speed silicon optical modulator based on reverse-biased pn diode in a silicon waveguide," Semicond. Sci. Technol., vol.23, pp. 064001-1-064001-7, May 2008.