Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions

Optics Express

Volumn 19, Issue 15, 2011, Pages 14690-14695

  Ziebell, Melissa ^a   Marris Morini, Delphine ^a,b   Rasigade, Gilles ^a   Crozat, Paul ^a   Fédéli, Jean Marc ^b   Grosse, Philippe ^b   Cassan, Eric ^a   Vivien, Laurent ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EXTINCTION; OPTICAL RESONATORS;

10-GBIT/S; CARRIER DEPLETION; EXTINCTION RATIOS; P-N JUNCTION; RING RESONATOR; SILICON MODULATORS; TM POLARIZATION;

MODULATORS;

EID: 79960501785     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.014690     Document Type: Article

References (13)

1. S. Koehl, A. Liu, and M. Paniccia, "Integrated silicon photonics: harnessing the data explosion," Opt. Photon. News 22(3), 24-39 (2011).
2. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, "40 Gbit/s silicon optical modulator for high speed applications," Electron. Lett. 43(22), 1196-1197 (2007). (Pubitemid 47631710)
3. D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J.-M. Fédéli, "High speed silicon optical modulator with self aligned fabrication process," Opt. Express 18(18), 19064-19069 (2010).
4. T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, "Silicon modulators an germanium photodetectors on SOI: monolithic integration, compatibility and performance optimization," IEEE J. Sel. Top. Quantum Electron. 16(1), 307-315 (2010).
5. N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, "High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25 μm silicon-on-insulator waveguides," Opt. Express 18(8), 7994-7999 (2010).
6. J. W. Park, J.-B. You, I. G. Kim, and G. Kim, "High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode," Opt. Express 17(18), 15520-15524 (2009).
7. G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, "High extinction ratio 10 Gbit/s silicon optical modulator," Opt. Express 19(7), 5827-5832 (2011).
8. F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, "40 Gb/s silicon photonics modulator for TE and TM polarisations," Opt. Express 19(12), 11804-11814 (2011).
9. F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O'Faolain, F. Dong, J. M. Fédéli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Martí, "High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode," Opt. Express 17(24), 21986-21991 (2009).
10. P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, "Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator," Opt. Express 17(25), 22484-22490 (2009).
11. G. Rasigade, D. Marris-Morini, L. Vivien, and E. Cassan, "Performance evolutions of carrier depletion silicon optical modulators: from PN to PIPIN diodes," IEEE J. Sel. Top. Quantum Electron. 16(1), 179-184 (2010).
12. Z.-Y. Li, D.-X. Xu, W. R. McKinnon, S. Janz, J. H. Schmid, P. Cheben, and J.-Z. Yu, "Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions," Opt. Express 17(18), 15947-15958 (2009).
13. G. Rasigade, D. Marris-Morini, M. Ziebell, E. Cassan, and L. Vivien, "Analytical model for depletion-based silicon modulator simulation," Opt. Express 19(5), 3919-3924 (2011).