Free-carrier electrorefraction and electroabsorption modulation predictions for silicon over the 1-14-μm infrared wavelength range

IEEE Photonics Journal

Volumn 3, Issue 6, 2011, Pages 1171-1180

  Nedeljkovic, Milos ^a   Soref, Richard ^b   Mashanovich, Goran Z ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

Author keywords

Absorption; electrooptic modulators; semiconductor impurities; silicon

Indexed keywords

ABSORPTION; IMPURITIES; MODULATION; MODULATORS; SEMICONDUCTOR DOPING; SILICON;

CRYSTALLINE SILICONS; ELECTRO-ABSORPTION; ELECTRO-OPTIC MODULATORS; ELECTROABSORPTION MODULATION; INFRARED WAVELENGTHS; KRAMERS-KRONIG ANALYSIS; TERAHERTZ ABSORPTION; WAVELENGTH DEPENDENCE;

FORECASTING;

EID: 83455162199     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2011.2171930     Document Type: Article

References (22)

1. R. A. Soref and B. R. Bennett, "Electrooptical effects in silicon", IEEE J. Quantum Electron., vol. QE-23, no. 1, pp. 123-129, Jan. 1987.
2. R. A. Soref, "Towards silicon-based longwave integrated optoelectronics", Proc. SPIE, vol. 6898, p. 689809, Jan. 2008.
3. S. Zlatanovic, J. S. Park, S. Moro, J. M. Chavez-Boggio, I. V. Divliansky, N. Alic, S. Mookherjea, and S. Radic, "Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source", Nat. Photon., vol. 4, no. 8, pp. 561-564, Aug. 2010.
4. G. Z. Mashanovich, M. M. Milosevic, M. Nedeljkovic, N. Owens, B. Xiong, E. J. Teo, and Y. Hu, "Low loss silicon waveguides for the mid-infrared", Opt. Express, vol. 19, no. 8, pp. 7112-7119, Apr. 2011.
5. R. Shankar, R. Laijssen, I. Bulu, and M. Lonear, "Mid-infrared photonic crystal cavities in silicon", Opt. Express, vol. 19, no. 6, pp. 5579-5586, Mar. 2011.
6. T. Baehr-Jones, A. Spott, R. Ilic, B. Penkov, W. Asher, and M. Hochberg, "Silicon-on-sapphire integrated waveguides for the mid-infrared", Opt. Express, vol. 18, no. 12, pp. 12 127-12 135, Jun. 2010.
7. A. Spott, Y. Liu, T. Baehr-Jones, R. Ilic, and M. Hochberg, "Silicon waveguides and ring resonators at 5.5 μm", Appl. Phys. Lett., vol. 97, no. 21, p. 213 501, Nov. 2010.
8. A. Singh, "Free charge carrier induced refractive index modulation of crystalline silicon", in Proc. 7th IEEE Int. Conf. Group IV Photon. (GFP), Beijing, China, 2010, pp. 102-104.
9. G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, "Silicon optical modulators", Nat. Photon., vol. 4, no. 8, pp. 518-526, Aug. 2010.
10. F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, "40 Gb/s silicon photonics modulator for TE and TM polarisations", Opt. Express, vol. 19, no. 12, pp. 11 804-11 814, Jun. 2011.
11. D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, "High contrast 40 Gbit/s optical modulation in silicon", Opt. Express, vol. 19, no. 12, pp. 11 507-11 516, Jun. 2011.
12. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometre-scale electro-optic modulator", Nature, vol. 435, pp. 325-327, May 2005.
13. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region", J. Opt. A (U. K.), Pure Appl. Opt, vol. 8, no. 10, pp. 840-848, Oct. 2006. (Pubitemid 44424662)
14. G. T. Reed, Silicon Photonics: The State of the Art. Chichester, U. K.: Wiley, Apr. 2008.
15. W. C. Dash and R. Newman, "Intrinsic optical absorption in single-crystal germanium and silicon at 77 °K and 300 °K", Phys. Rev., vol. 99, no. 4, pp. 1151-1155, Aug. 1955.
16. P. E. Schmid, "Optical absorption in heavily doped silicon", Phys. Rev. B, Condens. Matter, vol. 23, no. 10, pp. 5531-5536, May 1981.
17. V. I. Fistul, Heavily Doped Semiconductors. New York: Plenum, 1969.
18. W. Spitzer and H. Y. Fan, "Infrared absorption in n-type silicon", Phys. Rev., vol. 108, no. 2, pp. 268-271, Oct. 1957.
19. C. M. Randall and R. D. Rawcliffe, "Refractive indices of germanium, silicon, and fused quartz in the far infrared", Appl. Opt., vol. 6, no. 11, pp. 1889-1895, Nov. 1967.
20. A. G. U. Perera, W. Z. Shen, W. C. Mallard, M. O. Tanner, and K. L. Wang, "Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors", Appl. Phys. Lett., vol. 71, no. 4, pp. 515-517, Jul. 1997. (Pubitemid 127665458)
21. x films", J. Appl. Phys., vol. 95, no. 10, pp. 5301-5304, Feb. 2004.
22. P. A. Schumann, Jr., W. A. Keenan, A. H. Tong, H. H. Gegenwarth, and C. P. Schneider, "Optical constants of silicon in the wavelength range 2.5 to 40 μm", IBM, East Fishkill, NY, Tech. Rep. TR-22.1008, 1970.