7 Gbit/s electro-optic modulator in silicon technology

Optics Express

Volumn 19, Issue 12, 2011, Pages 11841-11851

  Alloatti, L ^a,b   Korn, D ^a   Palmer, R ^a   Hillerkuss, D ^a   Li, J ^a   Barklund, A ^c   Dinu, R ^c   Wieland, J ^c   Fournier, M ^d   Fedeli, J ^d   Yu, H ^e   Bogaerts, W ^e   Dumon, P ^e   Baets, R ^e   Koos, C ^a,b   Freude, W ^a,b   Leuthold, J ^a,b  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b Institute of Microstructure Technology (IMT)   (Germany)

^c GigOptix Inc   (United States)

^d CEA GRENOBLE   (France)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTROOPTICAL DEVICES; FREQUENCY RESPONSE;

CMOS COMPATIBLE; CONDUCTIVE ELECTRONS; DATA ENCODING; DATA RATES; DATA-RATE; ELECTRO-OPTIC MODULATORS; ELECTROOPTIC EFFECTS; HIGH-SPEED OPERATION; IMPURITY SCATTERING; KEY COMPONENT; MODULATION VOLTAGE; NON-LINEARITY; OPEN EYE DIAGRAMS; OPTICAL NONLINEAR; OPTICAL SIGNALS; POSSIBLE SOLUTIONS; SILICON BASED PHOTONICS; SILICON TECHNOLOGIES; SILICON WAVEGUIDE;

LIGHT MODULATORS;

EID: 79958212813     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.011841     Document Type: Article

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