Silicon optical interconnect device technologies for 40 Gb/s and beyond

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 19, Issue 2, 2013, Pages

  Liow, Tsung Yang ^a   Song, Junfeng ^a,b   Tu, Xiaoguang ^a   Lim, Andy Eu Jin ^a   Fang, Qing ^a   Duan, Ning ^a   Yu, Mingbin ^a   Lo, Guo Qiang ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b JILIN UNIVERSITY   (China)

Author keywords

Avalanche gain; Franz Keldysh effect; germanium photodetectors; low energy optical interconnects; silicon modulators; thermooptics

Indexed keywords

AVALANCHE GAINS; AVALANCHE MULTIPLICATION; FRANZ-KELDYSH EFFECT; GAIN-BANDWIDTH PRODUCTS; HIGH-SPEED PERFORMANCE; OPTICAL INTERCONNECT; SILICON MODULATORS; THERMOOPTICS;

GERMANIUM; OPTICAL INTERCONNECTS; PHOTODETECTORS; PHOTONS;

SILICON;

EID: 84875988539     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2012.2218580     Document Type: Article

References (38)

1. A. Vahdat, H. Liu, X. Zhao, and C. Johnson, "The emerging optical data center," presented at the Opt. Fiber Commun. Conf. Expo./Nat. Fiber Opt. Eng. Conf., Los Angeles, CA, 2011.
2. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Exp., vol. 15, no. 2, pp. 660-668, 2007. (Pubitemid 46168516)
3. D.Marris-Morini, L. Vivien, J.M. Fedeli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Exp., vol. 16, pp. 334-339, 2008.
4. Z.-Y. Li, D.-X. Xu,W. R.McKinnon, S. Janz, J. H. Schmid, P. Cheben, and J.-Z. Yu, "Silicon waveguide modulator based on carrier depletion in periodically interleaved pn junctions," Opt. Exp., vol. 17, no. 18, pp. 15947- 15958, 2009.
5. N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, "High speed carrier-depletion modulators with 1.4 v-cm vπl integrated on 0.25μm silicon-on-insulator waveguides," Opt. Exp., vol. 18, no. 8, pp. 7994-7999, 2010.
6. D. J. Thomson, F. Y. Gardes,G. T.Reed, F.Milesi, and J.-M. Fedeli, "High speed silicon optical modulatorwith self aligned fabrication process," Opt. Exp., vol. 18, no. 18, pp. 19064-19069, 2010.
7. F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, "40 Gb/s silicon photonics modulator for TE and TM polarisations," Opt. Exp., vol. 19, no. 12, pp. 11804-11814, 2011.
8. D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, "High contrast 40 Gbit/s optical modulation in silicon," Opt. Exp., vol. 19, no. 12, pp. 11507-11516, 2011.
9. K. Ogawa, K. Goi, Y. Tan, T. Liow, X. Tu, Q. Fang, G. Lo, and D. Kwong, "Silicon Mach-Zehnder modulator of extinction ratio beyond 10 dB at 10.0-12.5 Gbps," presented at the 37th Eur. Conf. Expo. Opt. Commun., OSA Tech. Digest, Geneva, Switzerland, 2011, Paper We.10.P1.28.
10. K. Ogawa, K. Goi, H. Kusaka, K. Oda, T. Liow, X. Tu, G. Lo, and D. Kwong, "20-Gbps silicon photonic waveguide nested Mach-Zehnder QPSK modulator," presented at the Nat. Fiber Opt. Eng. Conf., OSA Tech. Dig., Los Angeles, CA, 2012, Paper JTh2A.20.
11. Q. Xu, B. Schmidt, S. Pradhan, andM. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature, vol. 435, no. 7040, pp. 325-327, 2005. (Pubitemid 40745539)
12. Q. Xu, S.Manipatruni, B. Schmidt, J. Shakya, andM. Lipson, "12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators," Opt. Exp., vol. 15, no. 2, pp. 430-436, 2007. (Pubitemid 46168487)
13. J. B. You, M. Park, J. W. Park, and G. Kim, "12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode," Opt. Exp., vol. 16, no. 22, pp. 18340-18344, 2008.
14. P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, "Low VPP, ultralow-energy, compact, high-speed silicon electro-optic modulator," Opt. Exp., vol. 17, no. 25, pp. 22484-22490, 2009.
15. F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O'Faolain, F. Dong, J. M. Fedeli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Marti, "High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode," Opt. Exp., vol. 17, no. 24, pp. 21986-21991, 2009.
16. S. Manipatruni, K. Preston, L. Chen, and M. Lipson, "Ultra-low voltage, ultra-small mode volume siliconmicroringmodulator," Opt. Exp., vol. 18, no. 17, pp. 18235-18242, 2010.
17. W. A. Zortman, M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, "Low-power high-speed silicon microdisk modulators," presented at the Conf. Lasers Electro-Opt., OSA Tech. Dig., San Jose, CA, 2010, Paper CThJ4.
18. P. Dong, R. Shafiiha, S. Liao, H. Liang, N.-N. Feng, D. Feng, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, "Wavelength-tunable siliconmicroringmodulator," Opt. Exp., vol. 18, no. 11, pp. 10941-10946, 2010.
19. G. Li, X. Zheng, J. Yao, H. Thacker, I. Shubin, Y. Luo, K. Raj, J. E. Cunningham, andA. V.Krishnamoorthy, "25Gb/s 1 v-drivingCMOS ring modulator with integrated thermal tuning," Opt. Exp., vol. 19, no. 21, pp. 20435-20443, 2011.
20. T. Y. Liow, K. W. Ang, Q. Fang, J. Song, Y. Xiong, M. Yu, G. Q. Lo, and D. L. Kwong, "Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility and performance optimization," IEEE J. Sel. Topics Quantum Electron., vol. 16, no. 1, pp. 307-315, Jan./Feb. 2010.
21. V. Milanovic, M. Ozgur, D. C. DeGroot, J. A. Jargon, M. Gaitan, and M. E. Zaghloul, "Characterization of broad-band transmission for coplanarwaveguides onCMOSsilicon substrates," IEEE Trans.Microw. Theory Tech., vol. 46, no. 5, pp. 632-640, May 1998. (Pubitemid 128738717)
22. X. Tu, T. Liow, J. Song, M. Yu, and G. Q. Lo, "Fabrication of low loss and high speed silicon optical modulator using doping compensationmethod, " Opt. Exp., vol. 19, no. 19, pp. 18029-18035, 2011.
23. T. Y. Liow, X. Tu, Q. Fang, Y. Z. Xiong, J. Song, M. Yu, G. Q. Lo, and D. L. Kwong, "High performance depletion-mode silicon modulators," in Proc. 8th IEEE Int. Conf. Group IV Photonics, 2011, pp. 20-22.
24. M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, "Low-voltage, compact, depletion-mode, silicon Mach- Zehnder modulator," IEEE J. Sel. Topics Quantum Electron., vol. 16, no. 1, pp. 159-164, Jan.-Feb. 2010.
25. S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kartner, "Operation and optimization of silicon-diode-based optical modulators," IEEE J. Sel. Topics Quantum Electron., vol. 16, no. 1, pp. 165-172, Jan./Feb. 2010.
26. J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. Cannon, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kartner, and J. Yasaitis, "Highperformance, tensile-strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett., vol. 87, pp. 103501-1-103501-3, 2005.
27. S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, "Germaniumon- SOI infrared detectors for integrated photonic applications," IEEE J. Sel. Topics Quantum Electron., vol. 12, no. 6, pp. 1489-1502, Nov./Dec. 2006. (Pubitemid 44956118)
28. S. Liao, N. Feng, D. Feng, P. Dong, R. Shafiiha, C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. Cunningham, Y. Luo, and M. Asghari, "36 GHz submicron silicon waveguide germanium photodetector," Opt. Exp., vol. 19, pp. 10967-10972, 2011.
29. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, "Waveguide-integrated,ultralow-energy gesi electro-absorption modulators," Nature Photon., vol. 2, pp. 433-437, 2008.
30. N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, "30 GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide," Opt. Exp., vol. 19, no. 8, pp. 7062-7067, 2011.
31. A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, "Novel evanescent coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector," Opt. Exp., vol. 19, no. 6, pp. 5040-5046, 2011.
32. K. Yamada, T. Tsuchizawa, T.Watanabe, R. Kou, H. Nishi, H. Shinojima, Y. Ishikawa, K. Wada, and S. Itabashi, "Avalanche-mode operation of a simple vertical p-i-n germanium photodiode coupled with a silicon waveguide," in Proc. 8th IEEE Int. Conf. Group IV Photonics, Sep. 14-16, 2011, pp. 329-331.
33. Y. Kang, M. Zadka, S. Litski, G. Sarid, M. Morse, M. J. Paniccia, Y. H. Kuo, J. Bowers, A. Beling, H. D. Liu, D. C. McIntosh, J. Campbell, and A. Pauchard, "Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection," Opt. Exp., vol. 16, no. 13, pp. 9365-9371, 2008.
34. Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen,W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product," Nat. Photonics, vol. 3, no. 1, pp. 59-63, 2009.
35. N. Duan, T. Liow, A. Lim, L. Ding, and G. Lo, "310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection," Opt. Exp., vol. 20, pp. 11031-11036, 2012.
36. S. Assefa, F. Xia, and Y. A. Vlasov, "Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects," Nature, vol. 464, no. 7285, pp. 80-84, 2010.
37. Q. Fang, J. Song, X. Luo, M. Yu, G. Lo, and Y. Liu, "Mode-size converter with high coupling efficiency and broad bandwidth," Opt. Exp., vol. 19, pp. 21588-21594, 2011.
38. J. Liu, J. Yu, S. Chen, and J. Xia, "Fabrication and analysis of 2×2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching," Opt. Commun., vol. 245, no. 1-6, pp. 137-144, Jan. 2005. (Pubitemid 40079315)