Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon

Optics Express

Volumn 21, Issue 1, 2013, Pages 867-876

  Edwards, Elizabeth H ^a   Lever, Leon ^b   Fei, Edward T ^a   Kamins, Theodore I ^a   Ikonic, Zoran ^b   Harris, James S ^a   Kelsall, Robert W ^b   Miller, David A B ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

WAVEGUIDES;

BROAD BANDS; C-BANDS; EIGEN-MODE EXPANSION; ELECTRO-ABSORPTION; EPITAXIALLY GROWN; EPITAXY DESIGN; GE/SIGE QUANTUM WELLS; LOW-VOLTAGE; OPTICAL COUPLINGS; SOI WAVEGUIDES; VIRTUAL SUBSTRATES;

EPITAXIAL GROWTH;

EID: 84872735929     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.000867     Document Type: Article

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