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Volumn 29, Issue 8, 2014, Pages

Electrical and structural characterization of nitrogen doped ZnO layers grown at low temperature by atomic layer deposition

(4) Kolkovsky, V I a Snigurenko, D b Jakiela, R b Guziewicz, E b

a DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

b INSTITUTE OF PHYSICS (Poland)

Author keywords

ALD; capacitance; DLTS; I V; ZnO

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYDROGEN BONDS; METALLIC FILMS; OXYGEN; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

ALD; FREE CARRIER CONCENTRATION; I-V; IV CHARACTERISTICS; NITROGEN ATMOSPHERES; RECTIFICATION RATIO; STRUCTURAL CHARACTERIZATION; ZNO;

OXYGEN VACANCIES;

EID: 84904598447 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/29/8/085006 Document Type: Article

Times cited : (4)

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