Dependence of the electrical properties of the ZnO thin films grown by atomic layer epitaxy on the reactant feed sequence

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1031-1035

  Lee, Chongmu ^a   Lim, Jongmin ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC PHYSICS; CARRIER MOBILITY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; SAPPHIRE; THIN FILMS;

ATOMIC LAYER EPITAXY; DOPING SOURCE GAS; ZNO THIN FILMS;

ZINC OXIDE;

EID: 33745493295     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2209653     Document Type: Article

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