Valence band offset of ZnO4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Fan, H B ^a   Sun, G S ^a   Yang, S Y ^a   Zhang, P F ^a   Zhang, R Q ^a   Wei, H Y ^a   Jiao, C M ^a   Liu, X L ^a   Chen, Y H ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

BAND ALIGNMENT; CONDUCTION BAND OFFSETS; VALENCE BAND OFFSET (VBO); WURTZITE;

HETEROJUNCTIONS;

EID: 44049084819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2926679     Document Type: Article

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